AOB11S65L - описание и поиск аналогов

 

AOB11S65L. Аналоги и основные параметры

Наименование производителя: AOB11S65L

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 198 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 20 ns

Cossⓘ - Выходная емкость: 42 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.399 Ohm

Тип корпуса: TO263

Аналог (замена) для AOB11S65L

- подборⓘ MOSFET транзистора по параметрам

 

AOB11S65L даташит

 ..1. Size:300K  aosemi
 aob11s65l.pdf pdf_icon

AOB11S65L

AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 13.2nC By provi

 6.1. Size:299K  aosemi
 aot11s65 aob11s65 aotf11s65.pdf pdf_icon

AOB11S65L

AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 13.2nC By provi

 6.2. Size:299K  aosemi
 aob11s65.pdf pdf_icon

AOB11S65L

AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 13.2nC By provi

 6.3. Size:253K  inchange semiconductor
 aob11s65.pdf pdf_icon

AOB11S65L

isc N-Channel MOSFET Transistor AOB11S65 FEATURES Drain Current I =11A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.399 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AOD400 , AOD402 , AOD404 , AOD406 , AOD408 , AOD410 , AOB10N60L , AOB11S60L , IRFZ24N , AOB12N50L , AOB15S60L , AOB15S65L , AOB20S60L , AOB25S65L , AOB270L , AOB27S60L , AOB418 .

History: 2SK552

 

 

 

 

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