AOL1444N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1444 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunity and ID = 85A (VGS = 10V)body diode characteristics. This device is ideally RDS(ON)

AOL1446N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1446 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate chargeand lowID = 85A (VGS = 10V)gate resistance. This device is ideally suited for useRDS(ON)

AOL144830V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOL1448 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 36AThis device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)

AOL1420N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1420 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and lowID = 85A (VGS = 10V)gate resistance. This device is ideally suited for useRDS(ON)

AOL1454N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1454 uses advanced trench technology toprovide excellent RDS(ON), low gate charge. It is ESD VDS (V) = 40Vprotected. This device is suitable for use as a low side ID = 50A (VGS = 10V)switch in SMPS and general purpose applications.RDS(ON)

AOL141230V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AOL1412 uses advanced trench technology ID (at VGS=10V) 70Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

AOL1404G20V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 46A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)

AOL140420V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1404 combines advanced trench MOSFET 20Vtechnology with a low resistance package to provide ID (at VGS=4.5V)45Aextremely low RDS(ON). This device is ideal for load switch

AOL1436N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1436 uses advanced trench technology to VDS (V) = 25Vprovide excellent RDS(ON), shoot-through immunity and ID = 50A (VGS = 10V)body diode characteristics. This device is ideally suiteRDS(ON)

AOL1401P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate VDS (V) = -38Vcharge with a 25V gate rating. This device is suitable ID = -85Afor use as a load switch or in PWM applications. It is RDS(ON)

AOL1428N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1428 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device VDS (V) = 30Vis suitable for use as a high side switch in SMPS and ID = 45A (VGS = 10V)general purpose applications.RDS(ON)

AOL145830V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS30VThe AOL1458 is fabricated with SDMOSTM trench ID (at VGS=10V) 46Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

AOL1432AN-Channel SDMOSTM POWER TransistorGeneral Description FeaturesVDS (V) = 25VThe AOL1432A is fabricated with SDMOSTM trench ID = 44A (VGS = 10V)technology that combines excellent RDS(ON) with low gate charge. The result is outstanding efficiency with RDS(ON)

AOL1482100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOL1482 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 28Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

AOL1413P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1413 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge VDS (V) = -30Vwith a 25V gate rating. This device is suitable for use ID = -38A (VGS = -10V)as a load switch or in PWM applications. The device is RDS(ON)

AOL1426N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1426 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge.This deviceID = 46A (VGS = 10V)is suitable for use as a high side switch in SMPS andRDS(ON)

AOL1432N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1432 uses advanced trench technology and VDS (V) =25Vdesign to provide excellent RDS(ON) with low gate ID = 44 A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)

AOL1408N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1408 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunity and ID = 85A (VGS = 10V)body diode characteristics. This device is ideally suited RDS(ON)

AOL1454GTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

AOL1414N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1414 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate chargeand lowID = 85A (VGS = 10V)gate resistance. This device is ideally suited for useRDS(ON)

AOL1428A30V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1428A combines advanced trench MOSFET 30V49Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). This device is suitable for use as a