AOD460 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOD460
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 11.7 ns
Cossⓘ - Выходная емкость: 224 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
Тип корпуса: TO252
AOD460 Datasheet (PDF)
aod460.pdf
AOD460N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD460 uses advanced trench technology and VDS (V) = 25Vdesign to provide excellent RDS(ON) with low gateID = 25 A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
aod468.pdf
AOD468/AOI468300V,11.5A N-Channel MOSFETGeneral Description Product SummaryThe AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed 350V@150 VDSto deliver high levels of performance and robustness in 11.5A ID (at VGS=10V)popular AC-DC applications.By providing low RDS(on), Ciss
aod466.pdf
AOD466N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD466 uses advanced trench technology and VDS (V) = 25Vdesign to provide excellent RDS(ON) with low gate ID = 30A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)
aod464.pdf
AOD464N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD464 uses advanced trench technology and VDS (V) = 105Vdesign to provide excellent RDS(ON) with low gate ID = 40 A (VGS =10V)charge. This device is suitable for use in high voltage RDS(ON)
aod468 aoi468.pdf
AOD468/AOI468300V,11.5A N-Channel MOSFETGeneral Description Product SummaryThe AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed 350V@150 VDSto deliver high levels of performance and robustness in 11.5A ID (at VGS=10V)popular AC-DC applications.By providing low RDS(on), Ciss
aod464.pdf
SMD Type MOSFETN-Channel Enhancement MOSFET AOD464 (KOD464)TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 VDS (V) =105V ID = 40A (VGS = 10V)4 RDS(ON) 28m (VGS = 10V) @20A RDS(ON) 31m (VGS = 6V)0.1270.80+0.1 max-0.11 Gate+ 0.12.3 0.60- 0.12 Drain+0.153 Source4.60 -0.154 Drain
aod464.pdf
AOD464www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless
aod468.pdf
isc N-Channel MOSFET Transistor AOD468FEATURESDrain Current I = 11.5A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
aod464.pdf
isc N-Channel MOSFET Transistor AOD464FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 105V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
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