AOTF20S60L - описание и поиск аналогов

 

AOTF20S60L. Аналоги и основные параметры

Наименование производителя: AOTF20S60L

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 37.8 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 32 ns

Cossⓘ - Выходная емкость: 68 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.199 Ohm

Тип корпуса: TO220F

Аналог (замена) для AOTF20S60L

- подборⓘ MOSFET транзистора по параметрам

 

AOTF20S60L даташит

 ..1. Size:325K  aosemi
aotf20s60l.pdfpdf_icon

AOTF20S60L

AOT20S60/AOB20S60/AOTF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced MOSTM high voltage IDM 80A process that is designed to deliver high levels of RDS(ON),max 0.199 performance and robustness in switching applications. Qg,typ 20nC By providin

 ..2. Size:520K  aosemi
aot20s60l aob20s60l aotf20s60l aotf20s60.pdfpdf_icon

AOTF20S60L

AOT20S60L/AOB20S60L/AOTF20S60L/AOTF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT20S60L & AOB20S60L & AOTF20S60L & AOTF20S60 have been fabricated using the advanced MOSTM IDM 80A high voltage process that is designed to deliver high levels of RDS(ON),max 0.199 performance and robustness in switching applications. Qg,typ

 ..3. Size:252K  inchange semiconductor
aotf20s60l.pdfpdf_icon

AOTF20S60L

isc N-Channel MOSFET Transistor AOTF20S60L FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.199 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 5.1. Size:405K  aosemi
aot20s60 aob20s60 aotf20s60.pdfpdf_icon

AOTF20S60L

AOT20S60/AOB20S60/AOTF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced MOSTM high voltage IDM 80A process that is designed to deliver high levels of RDS(ON),max 0.199 performance and robustness in switching applications. Qg,typ 20nC By providin

Другие MOSFET... AOD490 , AOD512 , AOD518 , AOD606 , AOTF11S65L , AOTF15S60L , AOTF15S65L , AOTF18N65L , IRF9540N , AOTF298L , AOTF7S60 , AOTF7S60L , AOT400 , AOT402 , AOT426 , AOT428 , AOT42S60L .

 

 

 

 

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