AOTF20S60L
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOTF20S60L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 37.8
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.1
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 20
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 19.8
nC
trⓘ -
Время нарастания: 32
ns
Cossⓘ - Выходная емкость: 68
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.199
Ohm
Тип корпуса:
TO220F
Аналог (замена) для AOTF20S60L
AOTF20S60L
Datasheet (PDF)
..1. Size:325K aosemi
aotf20s60l.pdf 
AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin
..2. Size:252K inchange semiconductor
aotf20s60l.pdf 
isc N-Channel MOSFET Transistor AOTF20S60LFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.199(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
5.1. Size:405K aosemi
aot20s60 aob20s60 aotf20s60.pdf 
AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin
5.2. Size:324K aosemi
aotf20s60.pdf 
AOT20S60/AOB20S60/AOTF20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT20S60& AOB20S60 & AOTF20S60 have beenfabricated using the advanced MOSTM high voltage IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max 0.199performance and robustness in switching applications. Qg,typ 20nCBy providin
5.3. Size:252K inchange semiconductor
aotf20s60.pdf 
isc N-Channel MOSFET Transistor AOTF20S60FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.199(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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