AOTF20S60L. Аналоги и основные параметры
Наименование производителя: AOTF20S60L
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 37.8 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 32 ns
Cossⓘ - Выходная емкость: 68 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.199 Ohm
Тип корпуса: TO220F
Аналог (замена) для AOTF20S60L
- подборⓘ MOSFET транзистора по параметрам
AOTF20S60L даташит
aotf20s60l.pdf
AOT20S60/AOB20S60/AOTF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced MOSTM high voltage IDM 80A process that is designed to deliver high levels of RDS(ON),max 0.199 performance and robustness in switching applications. Qg,typ 20nC By providin
aot20s60l aob20s60l aotf20s60l aotf20s60.pdf
AOT20S60L/AOB20S60L/AOTF20S60L/AOTF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT20S60L & AOB20S60L & AOTF20S60L & AOTF20S60 have been fabricated using the advanced MOSTM IDM 80A high voltage process that is designed to deliver high levels of RDS(ON),max 0.199 performance and robustness in switching applications. Qg,typ
aotf20s60l.pdf
isc N-Channel MOSFET Transistor AOTF20S60L FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.199 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur
aot20s60 aob20s60 aotf20s60.pdf
AOT20S60/AOB20S60/AOTF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced MOSTM high voltage IDM 80A process that is designed to deliver high levels of RDS(ON),max 0.199 performance and robustness in switching applications. Qg,typ 20nC By providin
Другие MOSFET... AOD490 , AOD512 , AOD518 , AOD606 , AOTF11S65L , AOTF15S60L , AOTF15S65L , AOTF18N65L , IRF9540N , AOTF298L , AOTF7S60 , AOTF7S60L , AOT400 , AOT402 , AOT426 , AOT428 , AOT42S60L .
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