Справочник MOSFET. AON2880

 

AON2880 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AON2880
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 1.5 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0215 Ohm
   Тип корпуса: DFN2X2

 Аналог (замена) для AON2880

 

 

AON2880 Datasheet (PDF)

 ..1. Size:232K  aosemi
 aon2880.pdf

AON2880 AON2880

AON2880 20V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON2880 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 7Aextremely low RDS(ON). This device contains two RDS(ON) (at VGS =4.5V)

 9.1. Size:262K  aosemi
 aon2800.pdf

AON2880 AON2880

AON280020V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON2800 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 4.5Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)

 9.2. Size:171K  aosemi
 aon2801.pdf

AON2880 AON2880

AON2801Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON2801/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge andID = -3A (VGS = -4.5V)operation with gate voltages as low as 1.8V. ThisRDS(ON)

 9.3. Size:250K  aosemi
 aon2810.pdf

AON2880 AON2880

AON281030V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 2.5V VGS ID (at VGS=10V) 2A Low Gate Charge RDS(ON) (at VGS=10V)

 9.4. Size:230K  aosemi
 aon2809.pdf

AON2880 AON2880

AON280912V Dual P-Channel MOSFETGeneral Description Product SummaryVDSThe AON2809 combines advanced trench MOSFET -12Vtechnology with a low resistance package to provide ID (at VGS=-4.5V) -2Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

 9.5. Size:243K  aosemi
 aon2812.pdf

AON2880 AON2880

AON281230V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 4.5A Low Gate Charge RDS(ON) (at VGS=10V)

 9.6. Size:236K  aosemi
 aon2803.pdf

AON2880 AON2880

AON280320V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON2803 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -3.8Awith gate voltage as low as 1.8V. This device is suitable RDS(ON) (at VGS=-4.5V)

 9.7. Size:218K  aosemi
 aon2802.pdf

AON2880 AON2880

AON280230V Dual N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON2802 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 2Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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