Справочник MOSFET. AOT11S65L

 

AOT11S65L Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AOT11S65L
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 198 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 42 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.399 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для AOT11S65L

   - подбор ⓘ MOSFET транзистора по параметрам

 

AOT11S65L Datasheet (PDF)

 ..1. Size:300K  aosemi
 aot11s65l.pdf pdf_icon

AOT11S65L

AOT11S65/AOB11S65/AOTF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT11S65 & AOB11S65 & AOTF11S65 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 13.2nCBy provi

 6.1. Size:299K  aosemi
 aot11s65.pdf pdf_icon

AOT11S65L

AOT11S65/AOB11S65/AOTF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT11S65 & AOB11S65 & AOTF11S65 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 13.2nCBy provi

 6.2. Size:260K  inchange semiconductor
 aot11s65.pdf pdf_icon

AOT11S65L

isc N-Channel MOSFET Transistor AOT11S65FEATURESDrain Current I =11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.1. Size:292K  aosemi
 aot11s60l.pdf pdf_icon

AOT11S65L

AOT11S60/AOB11S60/AOTF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT11S60& AOB11S60 & AOTF11S60 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 11nCBy providin

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AON4407 , AON4413 , AON4420 , AON4602 , AON4701 , AON5800 , AON5802A , AOT11S60L , 10N65 , AOT15S60L , AOT15S65 , AOT15S65L , AOT20N25L , AOT20N60L , AOT20S60L , AOT22N50L , AOT25S65L .

History: SHD219601 | 2SK2897-01MR | AONR66821

 

 
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