Справочник MOSFET. AOT15S60L

 

AOT15S60L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOT15S60L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 208 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 15.6 nC
   trⓘ - Время нарастания: 22 ns
   Cossⓘ - Выходная емкость: 58 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.29 Ohm
   Тип корпуса: TO220

 Аналог (замена) для AOT15S60L

 

 

AOT15S60L Datasheet (PDF)

 ..1. Size:343K  aosemi
 aot15s60l.pdf

AOT15S60L AOT15S60L

AOT15S60/AOB15S60/AOTF15S60TM600V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT15S60& AOB15S60 & AOTF15S60 have beenfabricated using the advanced MOSTM high voltage IDM 63Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 16nCBy providing

 ..2. Size:260K  inchange semiconductor
 aot15s60l.pdf

AOT15S60L AOT15S60L

isc N-Channel MOSFET Transistor AOT15S60LFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 6.1. Size:343K  aosemi
 aot15s60.pdf

AOT15S60L AOT15S60L

AOT15S60/AOB15S60/AOTF15S60TM600V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT15S60& AOB15S60 & AOTF15S60 have beenfabricated using the advanced MOSTM high voltage IDM 63Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 16nCBy providing

 6.2. Size:260K  inchange semiconductor
 aot15s60.pdf

AOT15S60L AOT15S60L

isc N-Channel MOSFET Transistor AOT15S60FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 7.1. Size:302K  aosemi
 aot15s65.pdf

AOT15S60L AOT15S60L

AOT15S65/AOB15S65/AOTF15S65TM650V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT15S65 & AOB15S65 & AOTF15S65 have beenfabricated using the advanced MOSTM high voltage IDM 60Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 17.2nCBy provid

 7.2. Size:302K  aosemi
 aot15s65l.pdf

AOT15S60L AOT15S60L

AOT15S65/AOB15S65/AOTF15S65TM650V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT15S65 & AOB15S65 & AOTF15S65 have beenfabricated using the advanced MOSTM high voltage IDM 60Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 17.2nCBy provid

 7.3. Size:260K  inchange semiconductor
 aot15s65.pdf

AOT15S60L AOT15S60L

isc N-Channel MOSFET Transistor AOT15S65FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 7.4. Size:260K  inchange semiconductor
 aot15s65l.pdf

AOT15S60L AOT15S60L

isc N-Channel MOSFET Transistor AOT15S65LFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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