AOT20N60L - аналоги и даташиты транзистора

 

AOT20N60L - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AOT20N60L
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 417 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 125 ns
   Cossⓘ - Выходная емкость: 273 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.37 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для AOT20N60L

   - подбор ⓘ MOSFET транзистора по параметрам

 

AOT20N60L Datasheet (PDF)

 ..1. Size:540K  aosemi
 aot20n60l.pdf pdf_icon

AOT20N60L

AOT20N60/AOTF20N60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT20N60 & AOTF20N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 20Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 6.1. Size:540K  aosemi
 aot20n60.pdf pdf_icon

AOT20N60L

AOT20N60/AOTF20N60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT20N60 & AOTF20N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 20Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 6.2. Size:261K  inchange semiconductor
 aot20n60.pdf pdf_icon

AOT20N60L

isc N-Channel MOSFET Transistor AOT20N60FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.37(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 8.1. Size:285K  aosemi
 aot20n25.pdf pdf_icon

AOT20N60L

AOT20N25250V,20A N-Channel MOSFETGeneral Description Product Summary VDS300V@150The AOT20N25 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AON5800 , AON5802A , AOT11S60L , AOT11S65L , AOT15S60L , AOT15S65 , AOT15S65L , AOT20N25L , 10N65 , AOT20S60L , AOT22N50L , AOT25S65L , AOT270L , AOT27S60L , AON6906 , AON6908 , AON6912 .

History: BSC036NE7NS3G | NTK3139PT1G | SUM60N10-17 | IXFH50N85X | ZXMC3F31DN8 | 2N4003K | AOB15S60L

 

 
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