AON6704A datasheet, подбор замены

 ..1. Size:257K  aosemi
 aon6704a.pdf 

AON6704A 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6704A uses advanced trench technology 85A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is

 8.1. Size:155K  aosemi
 aon6708.pdf 

AON6708 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS (V) = 30V SRFETTM The AON6708 uses advanced trench ID = 30A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate RDS(ON)

 8.2. Size:269K  aosemi
 aon6702.pdf 

AON6702 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6702 uses advanced trench technology ID (at VGS=10V) 85A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 9.1. Size:268K  1
 aon6786.pdf 

AON6786 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6786 uses advanced trench technology ID (at VGS=10V) 85A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 9.2. Size:262K  1
 aon6790.pdf 

AON6790 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6790 uses advanced trench technology 68A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is

 9.3. Size:331K  aosemi
 aon6792.pdf 

AON6792 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 9.4. Size:301K  aosemi
 aon6774.pdf 

AON6774 30V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS LV) technology 30V Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)

 9.5. Size:243K  aosemi
 aon6794.pdf 

AON6794 30V N-Channel SRFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 9.6. Size:153K  aosemi
 aon6718l.pdf 

AON6718L N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AON6718L uses advanced trench technology VDS (V) = 30V with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ID = 80A (VGS = 10V) ideally suited for use as a low side switch in CPU core RDS(ON)

 9.7. Size:354K  aosemi
 aon6734.pdf 

AON6734 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 9.8. Size:279K  aosemi
 aon6716.pdf 

AON6716 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6716 uses advanced trench technology ID (at VGS=10V) 85A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 9.9. Size:313K  aosemi
 aon6760.pdf 

AON6760 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 36A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)

 9.10. Size:268K  aosemi
 aon6788.pdf 

AON6788 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6788 uses advanced trench technology ID (at VGS=10V) 80A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 9.11. Size:133K  aosemi
 aon6712.pdf 

AON6712 30V N-Channel MOSFET SRFET TM General Description Product Summary The AON6712 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge.This ID = 20A (VGS = 10V) device is suitable for use as a high side switch in RDS(ON)

 9.12. Size:340K  aosemi
 aon6756.pdf 

AON6756 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 36A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)

 9.13. Size:287K  aosemi
 aon6754.pdf 

AON6754 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)

 9.14. Size:293K  aosemi
 aon6758.pdf 

AON6758 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 32A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)

 9.15. Size:256K  aosemi
 aon6780.pdf 

AON6780 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6780 uses advanced trench technology 85A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is

 9.16. Size:290K  aosemi
 aon6752.pdf 

AON6752 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)

 9.17. Size:345K  aosemi
 aon6796.pdf 

AON6796 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

 9.18. Size:242K  aosemi
 aon6764.pdf 

AON6764 30V N-Channel SRFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 9.19. Size:128K  aosemi
 aon6710.pdf 

AON6710 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS (V) = 30V SRFETTM The AON6710 uses advanced trench ID = 20A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate RDS(ON)

 9.20. Size:255K  aosemi
 aon6782.pdf 

AON6782 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6782 uses advanced trench technology 85A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is