2SK3203S datasheet, подбор замены

 ..1. Size:54K  hitachi
 2sk3203l 2sk3203s.pdf 

2SK3203(L), 2SK3203(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-1384A (Z) 2nd. Edition Jan. 2001 Features Low on-resistance RDS(on) =11m typ. Low drive current 5V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 2 3 1 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3203(L), 2SK3203(S) Absolute Maximum Ratings (Ta = 2

 7.1. Size:58K  hitachi
 2sk3203.pdf 

2SK3203(L), 2SK3203(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-1384A (Z) 2nd. Edition Jan. 2001 Features Low on-resistance RDS(on) =11m typ. Low drive current 5V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 2 3 1 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3203(L), 2SK3203(S) Absolute Maximum Ratings (Ta = 2

 8.1. Size:196K  toshiba
 2sk3205.pdf 

2SK3205 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK3205 Switching Regulator Applications DC-DC Converter, and Unit mm Motor Drive Applications 4 V gate drive Low drain-source ON resistance RDS (ON) = 0.36 (typ.) High forward transfer admittance Yfs = 4.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 150 V)

 8.2. Size:53K  renesas
 2sk3209.pdf 

2SK3209 Silicon N Channel MOS FET High Speed Power Switching REJ03G1090-0300 (Previous ADE-208-759A) Target Specification Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain

 8.3. Size:66K  renesas
 rej03g1090 2sk3209ds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:51K  hitachi
 2sk319 2sk320.pdf 

 8.5. Size:280K  inchange semiconductor
 2sk3209.pdf 

isc N-Channel MOSFET Transistor 2SK3209 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 45m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.6. Size:354K  inchange semiconductor
 2sk3205.pdf 

isc N-Channel MOSFET Transistor 2SK3205 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 0.5 (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dri