2SK1600 datasheet, подбор замены

 ..1. Size:673K  toshiba
 2sk1600.pdf 

2sk160

 ..2. Size:214K  inchange semiconductor
 2sk1600.pdf 

isc N-Channel MOSFET Transistor 2SK1600 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

 8.1. Size:673K  toshiba
 2sk1602.pdf 

 8.2. Size:390K  renesas
 2sk160a.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:36K  panasonic
 2sk1606.pdf 

 8.4. Size:36K  panasonic
 2sk1609.pdf 

Power F-MOS FETs 2SK1609 2SK1609 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS 30V guaranteed Low RDS(on), high-speed switching characteristic 3.1 0.1 Applications High-speed switching (switching mode regulator) For high-frequency power amplification 1.3 0.2 1.4 0.1 +0.2 0.5 -0.1 Abs

 8.5. Size:36K  panasonic
 2sk1607.pdf 

Power F-MOS FETs 2SK1607 Silicon N-Channel Power F-MOS Unit mm Features 15.0 0.5 4.5 0.2 High avalanche energy capability 13.0 0.5 10.5 0.5 2.0 0.1 VGSS 30V guaranteed Low RDS(on), high-speed switching characteristic 3.2 0.1 Applications High-speed switching (switching mode regulator) 2.0 0.2 For high-frequency power amplification 1.4 0.3 1.1 0.1 5.45

 8.6. Size:36K  panasonic
 2sk1608.pdf 

Power F-MOS FETs 2SK1608 2SK1608 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS 30V guaranteed Low RDS(on), high-speed switching characteristic 3.1 0.1 Applications High-speed switching (switching mode regulator) For high-frequency power amplification 1.3 0.2 1.4 0.1 +0.2 0.5 -0.1 Abs

 8.7. Size:36K  panasonic
 2sk1605.pdf 

 8.8. Size:55K  no
 2sk1603.pdf 

 8.9. Size:81K  no
 2sk1601.pdf 

 8.10. Size:207K  inchange semiconductor
 2sk1606.pdf 

isc N-Channel MOSFET Transistor 2SK1606 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI

 8.11. Size:207K  inchange semiconductor
 2sk1609.pdf 

isc N-Channel MOSFET Transistor 2SK1609 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI

 8.12. Size:212K  inchange semiconductor
 2sk1603.pdf 

isc N-Channel MOSFET Transistor 2SK1603 DESCRIPTION Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE M

 8.13. Size:212K  inchange semiconductor
 2sk1602.pdf 

isc N-Channel MOSFET Transistor 2SK1602 DESCRIPTION Drain Current I = 2.8A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE M

 8.14. Size:216K  inchange semiconductor
 2sk1607.pdf 

isc N-Channel MOSFET Transistor 2SK1607 DESCRIPTION Drain Current I =13A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

 8.15. Size:207K  inchange semiconductor
 2sk1608.pdf 

isc N-Channel MOSFET Transistor 2SK1608 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI

 8.16. Size:215K  inchange semiconductor
 2sk1601.pdf 

isc N-Channel MOSFET Transistor 2SK1601 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

 8.17. Size:207K  inchange semiconductor
 2sk1605.pdf 

isc N-Channel MOSFET Transistor 2SK1605 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI