Справочник MOSFET. 2SK1660

 

2SK1660 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK1660
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 80 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 450 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
   Тип корпуса: TO3PML

 Аналог (замена) для 2SK1660

 

 

2SK1660 Datasheet (PDF)

 ..1. Size:63K  inchange semiconductor
 2sk1660.pdf

2SK1660 2SK1660

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1660 DESCRIPTION Drain Current ID=10A@ TC=25 Drain Source Voltage- : VDSS=450 (Min) APPLICATIONS high voltage,high speed applications, such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) UNISYMBOL VALUE ARAMETER T VD

 8.1. Size:82K  renesas
 2sk1669.pdf

2SK1660 2SK1660

2SK1669 Silicon N Channel MOS FET REJ03G0966-0200 (Previous: ADE-208-1310) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 90 ns) Suitable for motor control, switching regulator and DC-DC converter Outline RENESAS Package code: PRSS

 8.2. Size:81K  renesas
 2sk1668.pdf

2SK1660 2SK1660

2SK1668 Silicon N Channel MOS FET REJ03G0965-0200 (Previous: ADE-208-1309) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)

 8.3. Size:80K  renesas
 2sk1667.pdf

2SK1660 2SK1660

2SK1667 Silicon N Channel MOS FET REJ03G0964-0200 (Previous: ADE-208-1308) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)

 8.4. Size:443K  nec
 2sk1664.pdf

2SK1660 2SK1660

 8.5. Size:87K  no
 2sk1662m.pdf

2SK1660

 8.6. Size:209K  inchange semiconductor
 2sk1662.pdf

2SK1660 2SK1660

isc N-Channel MOSFET Transistor 2SK1662DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

 8.7. Size:214K  inchange semiconductor
 2sk1667.pdf

2SK1660 2SK1660

isc N-Channel MOSFET Transistor 2SK1667DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSlow onresistanceHigh speed switchingLow drive currentNo secondary breakdownSuitable for switchingregulator,

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SIHF15N65E

 

 
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