IRF9520
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF9520
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 60
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 6.8
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 18(max)
nC
trⓘ -
Время нарастания: 29
ns
Cossⓘ - Выходная емкость: 170
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6
Ohm
Тип корпуса:
TO220AB
Аналог (замена) для IRF9520
IRF9520
Datasheet (PDF)
..2. Size:1203K international rectifier
irf9520pbf.pdf PD- 95412IRF9520PbF Lead-Free06/15/04Document Number: 91074 www.vishay.com1IRF9520PbFDocument Number: 91074 www.vishay.com2IRF9520PbFDocument Number: 91074 www.vishay.com3IRF9520PbFDocument Number: 91074 www.vishay.com4IRF9520PbFDocument Number: 91074 www.vishay.com5IRF9520PbFDocument Number: 91074 www.vishay.com6IRF9520PbFDocument Number: 91
..3. Size:202K vishay
irf9520 sihf9520.pdf IRF9520, SiHF9520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.60 P-Channel RoHS*Qg (Max.) (nC) 18COMPLIANT 175 C Operating TemperatureQgs (nC) 3.0 Fast SwitchingQgd (nC) 9.0 Ease of ParallelingConfiguration Single Simple Drive Requi
0.2. Size:155K international rectifier
irf9520ns.pdf PD -91522AIRF9520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175C Operating TemperatureRDS(on) = 0.48 Fast SwitchingG P-ChannelID = -6.8A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve
0.3. Size:1012K international rectifier
irf9520spbf.pdf PD-95987IRF9520SPbF Lead-Free06/07/05Document Number: 91075 www.vishay.com1IRF9520SPbFDocument Number: 91075 www.vishay.com2IRF9520SPbFDocument Number: 91075 www.vishay.com3IRF9520SPbFDocument Number: 91075 www.vishay.com4IRF9520SPbFDocument Number: 91075 www.vishay.com5IRF9520SPbFDocument Number: 91075 www.vishay.com6IRF9520SPbFPeak Diode Re
0.4. Size:155K international rectifier
irf9520nl.pdf PD -91522AIRF9520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175C Operating TemperatureRDS(on) = 0.48 Fast SwitchingG P-ChannelID = -6.8A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve
0.5. Size:95K international rectifier
irf9520n.pdf PD - 91521AIRF9520NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.48 P-ChannelG Fully Avalanche RatedID = -6.8ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a
0.6. Size:418K international rectifier
irf9520nlpbf.pdf PD- 95764IRF9520NSPbFIF9520NLPbF Lead-Freewww.irf.com 104/26/05IRF9520NS/LPbF2 www.irf.comIRF9520NS/LPbFwww.irf.com 3IRF9520NS/LPbF4 www.irf.comIRF9520NS/LPbFwww.irf.com 5IRF9520NS/LPbF6 www.irf.comIRF9520NS/LPbFwww.irf.com 7IRF9520NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS A
0.7. Size:171K vishay
irf9520s sihf9520s.pdf IRF9520S, SiHF9520SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.60 Available in Tape and Reel Qg (Max.) (nC) 18 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 3.0 P-ChannelQgd (nC) 9.0 175 C Operating Temperature Fa
0.8. Size:196K vishay
irf9520s irf9520spbf sihf9520s.pdf IRF9520S, SiHF9520SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 0.60 Available in Tape and Reel Qg (Max.) (nC) 18 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 3.0 P-ChannelQgd (nC) 9.0 175 C Operating Temperature Fa
0.9. Size:160K infineon
irf9520npbf.pdf PD - 95411IRF9520NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = -100Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.48l P-ChannelGl Fully Avalanche RatedID = -6.8Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-res
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