IRF9520 datasheet, аналоги, основные параметры
Наименование производителя: IRF9520 📄📄
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.8 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 29 ns
Cossⓘ - Выходная емкость: 170 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO220AB
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Аналог (замена) для IRF9520
- подборⓘ MOSFET транзистора по параметрам
IRF9520 даташит
..2. Size:1203K international rectifier
irf9520pbf.pdf 
PD- 95412 IRF9520PbF Lead-Free 06/15/04 Document Number 91074 www.vishay.com 1 IRF9520PbF Document Number 91074 www.vishay.com 2 IRF9520PbF Document Number 91074 www.vishay.com 3 IRF9520PbF Document Number 91074 www.vishay.com 4 IRF9520PbF Document Number 91074 www.vishay.com 5 IRF9520PbF Document Number 91074 www.vishay.com 6 IRF9520PbF Document Number 91
..3. Size:202K vishay
irf9520 sihf9520.pdf 
IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.60 P-Channel RoHS* Qg (Max.) (nC) 18 COMPLIANT 175 C Operating Temperature Qgs (nC) 3.0 Fast Switching Qgd (nC) 9.0 Ease of Paralleling Configuration Single Simple Drive Requi
0.1. Size:160K international rectifier
irf9520npbf.pdf 
PD - 95411 IRF9520NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = -100V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.48 l P-Channel G l Fully Avalanche Rated ID = -6.8A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-res
0.3. Size:155K international rectifier
irf9520ns.pdf 
PD -91522A IRF9520NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175 C Operating Temperature RDS(on) = 0.48 Fast Switching G P-Channel ID = -6.8A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
0.4. Size:1012K international rectifier
irf9520spbf.pdf 
PD-95987 IRF9520SPbF Lead-Free 06/07/05 Document Number 91075 www.vishay.com 1 IRF9520SPbF Document Number 91075 www.vishay.com 2 IRF9520SPbF Document Number 91075 www.vishay.com 3 IRF9520SPbF Document Number 91075 www.vishay.com 4 IRF9520SPbF Document Number 91075 www.vishay.com 5 IRF9520SPbF Document Number 91075 www.vishay.com 6 IRF9520SPbF Peak Diode Re
0.5. Size:155K international rectifier
irf9520nl.pdf 
PD -91522A IRF9520NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9520S) VDSS = -100V Low-profile through-hole (IRF9520L) 175 C Operating Temperature RDS(on) = 0.48 Fast Switching G P-Channel ID = -6.8A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
0.6. Size:95K international rectifier
irf9520n.pdf 
PD - 91521A IRF9520N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature Fast Switching RDS(on) = 0.48 P-Channel G Fully Avalanche Rated ID = -6.8A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a
0.7. Size:418K international rectifier
irf9520nlpbf.pdf 
PD- 95764 IRF9520NSPbF IF9520NLPbF Lead-Free www.irf.com 1 04/26/05 IRF9520NS/LPbF 2 www.irf.com IRF9520NS/LPbF www.irf.com 3 IRF9520NS/LPbF 4 www.irf.com IRF9520NS/LPbF www.irf.com 5 IRF9520NS/LPbF 6 www.irf.com IRF9520NS/LPbF www.irf.com 7 IRF9520NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS A
0.8. Size:171K vishay
irf9520s sihf9520s.pdf 
IRF9520S, SiHF9520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 0.60 Available in Tape and Reel Qg (Max.) (nC) 18 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 3.0 P-Channel Qgd (nC) 9.0 175 C Operating Temperature Fa
0.9. Size:196K vishay
irf9520s irf9520spbf sihf9520s.pdf 
IRF9520S, SiHF9520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 0.60 Available in Tape and Reel Qg (Max.) (nC) 18 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 3.0 P-Channel Qgd (nC) 9.0 175 C Operating Temperature Fa
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