Справочник MOSFET. 2SK2402

 

2SK2402 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK2402
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.2 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для 2SK2402

 

 

2SK2402 Datasheet (PDF)

 ..1. Size:58K  inchange semiconductor
2sk2402.pdf

2SK2402
2SK2402

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2402 DESCRIPTION Drain Current ID= 3.5A@ TC=25 Drain Source Voltage- : VDSS= 600V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage 30 V

 8.1. Size:112K  1
2sk2409.pdf

2SK2402
2SK2402

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2409SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONThe 2SK2409 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for solenoid, motor, and lamp driver.4.5 0.210.0 0.3FEATURES3.2 0.22.7 0.2 Low On-ResistanceRDS(on) 27 m (VGS = 10 V, ID = 20 A)RDS(on) 40 m

 8.2. Size:402K  toshiba
2sk2400.pdf

2SK2402
2SK2402

2SK2400 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2400 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 17 (typ.) DS (ON) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhanceme

 8.3. Size:315K  toshiba
2sk2401.pdf

2SK2402
2SK2402

2SK2401 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2401 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.13 (typ.) High forward transfer admittance : |Yfs| = 17 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 200 V) Enhancement-mode : Vth = 1.5~3.5 V (VDS =

 8.4. Size:99K  sanyo
2sk2406.pdf

2SK2402
2SK2402

Ordering number:ENN5251N-Channel Silicon MOSFET2SK2406Ultrahigh-Speed Switching,Motor Driver ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2083B High-speed diode.[2SK2406]6.52.35.00.540.850.71.20.60.5 1 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SK2406]

 8.5. Size:43K  sanyo
2sk2403.pdf

2SK2402
2SK2402

Ordering number : EN86022SK2403SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK2403ApplicationsFeatures Built-in FRD. 10V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 450 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID 3 ADrain

 8.6. Size:82K  renesas
2sk2408.pdf

2SK2402
2SK2402

2SK2408 Silicon N Channel MOS FET REJ03G1011-0300 (Previous: ADE-208-1358) Rev.3.00 Apr 27, 2006 Application High speed power switching Features Low on-resistance Built-in fast recovery diode (trr = 120 ns typ) High speed switching Low drive current Suitable for switching regulator, motor control Outline RENESAS Package code: PRSS0004AC-A(Pack

 8.7. Size:96K  renesas
rej03g1011 2sk2408ds.pdf

2SK2402
2SK2402

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.9. Size:219K  inchange semiconductor
2sk2408.pdf

2SK2402
2SK2402

isc N-Channel MOSFET Transistor 2SK2408DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

 8.10. Size:214K  inchange semiconductor
2sk2401.pdf

2SK2402
2SK2402

isc N-Channel MOSFET Transistor 2SK2401DESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV D

 8.11. Size:55K  inchange semiconductor
2sk2407.pdf

2SK2402
2SK2402

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2407 DESCRIPTION Drain Current ID= 10A@ TC=25 Drain Source Voltage- : VDSS= 450V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage 30 V

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