2SK1858 - Даташиты. Аналоги. Основные параметры

2SK1859 Silicon N Channel MOS FET REJ03G0981-0200 (Previous: ADE-208-1328) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)D1. GateG2. Dr

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1855 DESCRIPTION Drain Current ID=12A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) Fast Switching Speed APPLICATIONS Switching power supply ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage 30 V