2SK1865 - описание и поиск аналогов

Power F-MOS FETs 2SK1868 2SK1868 Silicon N-Channel Power F-MOS Features Unit mm 5.0 0.1 Avalanche energy capability guaranteed EAS > 62.5mJ 10.0 0.2 1.0 Low ON-resistance RDS(on) RDS(on)1= 0.135 90 High-speed switching tf= 53ns No secondary breakdown 1.2 0.1 C1.0 2.25 0.2 Low-voltage drive possible(VGS= 4V) 0.65 0.1 Radial taping possible 0.35 0.1 1.0

Power F-MOS FETs 2SK1867 2SK1867 Silicon N-Channel Power F-MOS Unit mm 5.0 0.1 Features 10.0 0.2 1.0 Avalanche energy capability guaranteed EAS >15mJ VGSS= 30V guaranteed 90 High-speed switching tf = 26ns 1.2 0.1 C1.0 No secondary breakdown 2.25 0.2 Radial taping possible 0.65 0.1 0.35 0.1 1.05 0.1 0.55 0.1 Applications 0.55 0.1 Non-contact rela

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1824 N-CHANNEL MOS FET FOR SWITCHING The 2SK1824 is a N-channel vertical type MOS FET that is PACKAGE DIMENSIONS (in mm) driven at 2.5 V. 0.3 0.05 0.1+0.1 0.05 Because this MOS FET can be driven on a low voltage and because it is not necessary to consider the drive current, the 2SK1824 is ideal for driving the actuator of power-saving

2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Unit mm Analog Switch Applications 2.5 V gate drive Low threshold voltage V = 0.5 1.5 V th High speed Enhancement-mode Small package Marking Equivalent Circuit JEDEC Maximum Ratings (Ta = = 25 C) = = JEITA Characteristics S

2SK1827 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1827 High Speed Switching Applications Unit mm Analog Switch Applications 4 V gate drive Low threshold voltage V = 0.8 2.5 V th High speed Enhancement-mode Small package Marking Equivalent Circuit JEDEC Maximum Ratings (Ta = = 25 C) = = JEITA SC-70 Characteristics Sy

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2SK1825 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1825 High Speed Switching Applications Unit mm Analog Switch Applications 4 V gate drive Low threshold voltage V = 0.8 2.5 V th High speed Enhancement-mode Small package Equivalent Circuit JEDEC Maximum Ratings (Ta = = 25 C) = = JEITA Characteristics Symbol Rat

2SK1828 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1828 High Speed Switching Applications Unit mm Analog Switch Applications 2.5 V gate drive Low threshold voltage V = 0.5 1.5 V th High speed Enhancement-mode Small package Marking Equivalent Circuit JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1F Weight 0.012 g (typ.) Maximum Ra

2SK1826 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1826 High Speed Switching Applications Unit mm Analog Switch Applications 4 V gate drive Low threshold voltage V = 0.8 2.5 V th High speed Enhancement-mode Small package Marking Equivalent Circuit JEDEC TO-236MOD Maximum Ratings (Ta = = 25 C) = = JEITA SC-59 Characteristi

2SK1829 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829 High Speed Switching Applications Unit mm Analog Switch Applications 2.5 V gate drive Low threshold voltage V = 0.5 1.5 V th High speed Enhancement-mode Small package Marking Equivalent Circuit JEDEC Maximum Ratings (Ta = = 25 C) = = JEITA SC-70 Characteristics

2SK184 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK184 Low Noise Audio Amplifier Applications Unit mm High Yfs Y = 15 mS (typ.) (V = 10 V, V = 0) fs DS GS High breakdown voltage V = -50 V GDS Low noise NF = 1.0dB (typ.) (V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k ) DS D G High input impedance I = -1 nA (max) (V = -30 V) GS

2SK1875 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK1875 High Frequency Amplifier Applications Unit mm AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications High Yfs Yfs = 25 mS (typ.) Low C C = 7.5 pF (typ.) iss iss Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Gate-drain voltage

Ordering number EN4500 N-Channel Silicon MOSFET 2SK1848 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2091A Low-voltage drive. [2SK1848] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter S

Ordering number EN4645 N-Channel Silicon MOSFET 2SK1890 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2090A Low-voltage drive. [2SK1890] Surface mount type device making the following 10.2 4.5 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SK1890-applied equipm

Ordering number EN4206 N-Channel Silicon MOSFET 2SK1891 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SK1891] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SK1891-applied equipm

Ordering number EN4208 N-Channel Silicon MOSFET 2SK1897 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK1897] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO

Ordering number EN4505 N-Channel Silicon MOSFET 2SK1847 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2091A Low-voltage drive. [2SK1847] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter S

Ordering number EN4203 N-Channel Silicon MOSFET 2SK1886 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK1886] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO

Ordering number EN4209 N-Channel Silicon MOSFET 2SK1898 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SK1898] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SK1898-applied equipm

Ordering number EN4177 N-Channel Silicon MOSFET 2SK1813 High-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2089 Converters. [2SK1813] 10.2 4.5 1.3 1.2 0.8 0.4 1 2 3 1 Gate 2 Drain 3 Source 2.55 2.55 SANYO TO-220MF Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Co

Ordering number EN4205 N-Channel Silicon MOSFET 2SK1889 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SK1889] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SK1889-applied equipm

Ordering number EN4635 N-Channel Enhancement Silicon MOSFET 2SK1840 Analog Switch Applications Features Package Dimensions Large yfs . unit mm Enhancement type. 2024B Low ON resistance. [2SK1840] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Drain 3 Source SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi

Ordering number EN4646 N-Channel Silicon MOSFET 2SK1887 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK1887] Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SAN

Ordering number EN4636 N-Channel Enhancement Silicon MOSFET 2SK1841 Ultrahigh-Speed Switching, Analog Switch Applications Features Package Dimensions Large yfs . unit mm Enhancement type. 2040A Low ON resistance. [2SK1841] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1 Drain 1.3 1.3 2 Source 3 Gate 3.0 SANYO SPA 3.8nom Specifications Absolute Maximum Ratings

Ordering number EN4501 N-Channel Silicon MOSFET 2SK1849 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2091A Low-voltage drive. [2SK1849] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter S

Ordering number EN4207 N-Channel Silicon MOSFET 2SK1895 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK1895] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO

Ordering number EN4204 N-Channel Silicon MOSFET 2SK1888 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK1888] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO

Ordering number EN4648 N-Channel Silicon MOSFET 2SK1899 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2090A Low-voltage drive. [2SK1899] Surface mount type device making the following 10.2 4.5 1.3 possible. Reduction in the assembling time for 2SK1899- applied equipment. High-densi

Ordering number EN4634 N-Channel Enhancement Silicon MOSFET 2SK1839 Analog Switch Applications Features Package Dimensions Ultrasmall-sized package permitting 2SK1839- unit mm applied sets to be made small and slim. 2057A Large yfs . [2SK1839] Enhancement type. Low ON resistance. 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Gate 2 Drain 3

Ordering number EN4647 N-Channel Silicon MOSFET 2SK1896 DC-DC Converter, Motor Drive Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK1896] Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55

2SK1837 Silicon N Channel MOS FET REJ03G0979-0200 (Previous ADE-208-1326) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0004ZF-A (Package name TO-3PL) D G

2SK1808 Silicon N Channel MOS FET REJ03G0975-0200 (Previous ADE-208-1322) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1807 Silicon N Channel MOS FET REJ03G0974-0200 (Previous ADE-208-1321) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D

2SK1859 Silicon N Channel MOS FET REJ03G0981-0200 (Previous ADE-208-1328) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) D 1. Gate G 2. Dr

2SK1838(L), 2SK1838(S) Silicon N Channel MOS FET REJ03G0980-0300 Rev.3.00 Nov 21, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0004ZD-A RENESAS Package code PRSS0004ZD-C (Pack

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1835 Silicon N Channel MOS FET REJ03G0978-0300 (Previous ADE-208-1325) Rev.3.00 Apr 27, 2006 Application High speed power switching Features High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No secondary breakdown Suitable for switching regulator Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1880(L), 2SK1880(S) Silicon N Channel MOS FET REJ03G0983-0200 (Previous ADE-208-1331) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator Outline RENESAS Package code PRSS0004ZD-A RENESAS Package code PRSS0004ZD-C (Package name DPAK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1832 Silicon N Channel MOS FET REJ03G0977-0200 (Previous ADE-208-1324) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) D

Power F-MOS FETs 2SK1833 2SK1833 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Avalanche energy capability guaranteed EAS > 90mJ 5.5 0.2 2.7 0.2 VGSS= 30V guaranteed High-speed switching tf= 30ns 3.1 0.1 No secondary breakdown Applications 1.3 0.2 1.4 0.1 Non-contact relay Solenoid drive +0.2 0.5 -0.1 0.8 0.1 Motor drive Control

Power F-MOS FETs 2SK1803 2SK1803 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 60mJ 15.0 0.3 5.0 0.2 VGSS= 30V guaranteed 11.0 0.2 3.2 High-speed switching tf= 80ns 3.2 0.1 No secondary breakdown Applications 2.0 0.2 2.0 0.1 Non-contact relay 1.1 0.1 0.6 0.2 Solenoid drive 5.45 0.3 Motor drive 10.9 0

Power F-MOS FETs 2SK1834 2SK1834 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Avalanche energy capability guaranteed EAS > 15mJ 5.5 0.2 2.7 0.2 VGSS= 30V guaranteed High-speed switching tf = 25ns 3.1 0.1 No secondary breakdown Applications 1.3 0.2 1.4 0.1 Non-contact relay Solenoid drive +0.2 0.5 -0.1 0.8 0.1 Motor drive Contro

Silicon Junction FETs (Small Signal) 2SK1842 2SK1842 Silicon N-Channel Junction Unit mm For impedance conversion in low frequency +0.2 2.8 0.3 For infrared sensor +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Low gate-source leakage current, IGSS Small capacitance of Ciss, Coss, Crss 3 Downsizing of sets by mini-type package and automatic insertion by 2 taping/ma

Power F-MOS FETs 2SK1846 2SK1846 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 20mJ 3.4 0.3 8.5 0.2 6.0 0.5 1.0 0.1 VGSS= 30V guaranteed High-speed switching tf= 35ns No secondary breakdown 1.5max. 1.1max. Features Non-contact relay 0.8 0.1 0.5max. Solenoid drive 2.54 0.3 Motor drive 5.08 0.5 Control equipm

N-channel MOS-FET 2SK1821-01M FAP-IIA Series 600V 6,5 2A 30W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv

2SK1831, 2SK1832 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline 2SK1831, 2SK1832 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage K1831 VDSS 450 V K1832 500 G

SMD Type MOSFET N-Channel MOSFET 2SK1828 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 50mA 1 2 RDS(ON) 40 (VGS = 2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 Low threshold voltage Vth = 0.5 1.5 V 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-So

SMD Type MOSFET N-Channel MOSFET 2SK1828 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 20V 1 2 ID = 50mA +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 40 (VGS = 2.5V) Low threshold voltage Vth = 0.5 1.5 V 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source V

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1855 DESCRIPTION Drain Current ID=12A@ TC=25 Drain Source Voltage- VDSS=500V(Min) Fast Switching Speed APPLICATIONS Switching power supply ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage 30 V

isc N-Channel MOSFET Transistor 2SK1876 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Fast Switching Speed Low on-resistance For switchinggregulator,DC-DC Converter Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc N-Channel MOSFET Transistor 2SK1833 DESCRIPTION Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Diving circuit for a solenoid and motor Control equipment Switching power supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor 2SK1837 FEATURES With TO-3PL package Low input capacitance and gate charge High speed switching Low gate input resistance No secondary breakdown 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power

isc N-Channel MOSFET Transistor 2SK1805 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Chopper regulator and motor drive ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1879 DESCRIPTION Drain Current ID=45A@ TC=25 Drain Source Voltage- VDSS= 60V(Min) Fast Switching Speed APPLICATIONS Switching power supply ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage 30 V I

isc N-Channel MOSFET Transistor 2SK1809 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Fast Switching Speed Low on-resistance For switchinggregulator,DC-DC Converter Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc N-Channel MOSFET Transistor 2SK1821 DESCRIPTION Drain Current I = 2A@ T =25 D C Drain Source Voltage V =600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Chopper regulator and motor drive DC-DC converters UPS ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc N-Channel MOSFET Transistor 2SK1807 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High Breakdown Voltage ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 900 V DS

isc N-Channel MOSFET Transistor 2SK1803 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Contactless relay Diving circuit for a solenoid Driving circuit for a motor Control equipment Switching power supply

isc N-Channel MOSFET Transistor 2SK1819 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Chopper regulator Motor drive Inverters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

isc N-Channel MOSFET Transistor 2SK1834 DESCRIPTION Drain Current I = 2A@ T =25 D C Drain Source Voltage V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Diving circuit for a solenoid and motor Control equipment Switching power supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO