FUJI POWER MOSFET2SK2224-01RN-CHANNEL SILICON POWER MOSFETFAP-IIA SERIESOutline DrawingsFeaturesHigh speed switching5.50.3Low on-resistance0.30.215.53.23.2+0.3No secondary breakdownLow driving powerHigh voltageVGS= 30V GuaranteeAvalanche-proof0.32.10.3 1.6+0.2 1.10.10.2 3.5Applications0.20.25.45 5.45 0.6+0.2Switc

isc N-Channel MOSFET Transistor 2SK2224-01DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

2SK2229 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2229 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.12 (typ.) DS (ON) High forward transfer admittance : |Y | = 5.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS Enhancem

Ordering number:EN836GN-Channel Junction Silicon FET2SK222Low-Frequency,Low Noise Amplifier ApplicationsFeatures Package Dimensions Ultralow noise figure.unit:mm Large yfs .2019B Low gate leakage current.[2SK222]5.04.04.00.450.50.440.451 : Source2 : Gate3 : Drain1 2 3SANYO : NPJEDEC : TO-921.3 1.3EIAJ : SC-43SpecificationsA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2225 Silicon N Channel MOS FET REJ03G1005-0200 (Previous: ADE-208-140) Rev.2.00 Sep 07, 2005 Application High speed power switching Features High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003ZA-A(Package

Data Sheet 2SK2225-80-E R07DS1275EJ01001500V - 2A - MOS FET Rev.1.00Jun 22, 2015High Speed Power Switching Features High breakdown voltage (V = 1500 V) DSS High speed switching Low drive current Outline RENESAS Package code: PRSS0003ZD-A(Package name: TO-3PF)D1. GateG2. Drain3. SourceS123Absolute Maximum Ratings (Ta = 25C) Item S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2220, 2SK2221 Silicon N Channel MOS FET REJ03G1004-0200 (Previous: ADE-208-1352) Rev.2.00 Sep 07, 2005 Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics

N-channel MOS-FET2SK2223-01RFAP-IIA Series 500V 0,76 10A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Eq

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2221FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh efficiency switch

isc N-Channel MOSFET Transistor 2SK2223-01DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAM