2SK2230 - описание и поиск аналогов

2SK2231 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2231 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.12 (typ.) DS (ON) High forward transfer admittance Y = 5.0 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhancem

2SK2233 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -MOSV) 2SK2233 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.022 (typ.) DS (ON) High forward transfer admittance Y = 27 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhanc

2SK2232 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2232 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 36 m (typ.) High forward transfer admittance Yfs = 16 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement mode

Ordering number EN659K N-Channel Junction Silicon FET 2SK223 High Voltage Driver Applications Features Package Dimensions Ultrahigh withstand voltage (VGDS 80V). unit mm Due to low gate leakage currents even at high 2019B voltage, the 2SK223 is suitable for a wide range of [2SK223] application (IGDL=1nA/VDS=50V, ID=1mA). 5.0 4.0 4.0 High yfs ( yfs =

2SK2231 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Motor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2236 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) Fast Switching Speed APPLICATIONS Switching regulators ,DC-DC converter,Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V

isc N-Channel MOSFET Transistor 2SK2237 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators ,DC-DC converter,Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain