2SK2247 - описание и поиск аналогов

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2275 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2275 is N-channel Power MOS Field Effect Transis- (in millimeters) tor designed for high voltage switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 FEATURES 2.7 0.2 Low On-state Resistance RDS(on) = 2.8 MAX. (VGS = 10 V, ID = 2

2SK2208 External dimensions 2 ...... FM100 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 900 V V 900 V I = 100 A, V = 0V DSS (BR) DSS D GS V 30 V I 100 nA V = 30V GSS GSS GS I 5I 100 A V = 900V, V = 0V D A DSS DS GS I 20 A V 2.0 3.0 4.0 V V = 10V, I = 1mA D (pulse) TH DS

2SK2229 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2229 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.12 (typ.) DS (ON) High forward transfer admittance Y = 5.0 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhancem

2SK2231 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2231 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.12 (typ.) DS (ON) High forward transfer admittance Y = 5.0 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhancem

2SK2267 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2267 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 8 m (typ.) DS (ON) High forward transfer admittance Y = 60 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhancement

2SK2201 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2201 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.28 (typ.) DS (ON) High forward transfer admittance Y = 3.5 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhance

2SK2233 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -MOSV) 2SK2233 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.022 (typ.) DS (ON) High forward transfer admittance Y = 27 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhanc

2SK2274 5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSII ) 2SK2274 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 1.5 (typ.) High forward transfer admittance Y = 2.5 S (typ.) fs Low leakage current I = 300 A (max) (V = 640 V) DSS DS Enhancement-mode Vth = 1.5

2SK2232 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2232 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 36 m (typ.) High forward transfer admittance Yfs = 16 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement mode

2SK2200 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2200 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.28 (typ.) DS (ON) High forward transfer admittance Y = 3.5 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhance

2SK2266 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2266 Chopper Regulator, DC DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 22 m (typ.) DS (ON) High forward transfer admittance Y = 27 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhancem

Ordering number EN659K N-Channel Junction Silicon FET 2SK223 High Voltage Driver Applications Features Package Dimensions Ultrahigh withstand voltage (VGDS 80V). unit mm Due to low gate leakage currents even at high 2019B voltage, the 2SK223 is suitable for a wide range of [2SK223] application (IGDL=1nA/VDS=50V, ID=1mA). 5.0 4.0 4.0 High yfs ( yfs =

Ordering number EN836G N-Channel Junction Silicon FET 2SK222 Low-Frequency, Low Noise Amplifier Applications Features Package Dimensions Ultralow noise figure. unit mm Large yfs . 2019B Low gate leakage current. [2SK222] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 Source 2 Gate 3 Drain 1 2 3 SANYO NP JEDEC TO-92 1.3 1.3 EIAJ SC-43 Specifications A

Ordering number ENN5047 N-Channel Silicon MOSFET 2SK2273 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2091A Low-voltage drive. [2SK2273] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter

Ordering number ENN4753 N-Channel Silicon MOSFET 2SK2260 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SK2260] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 1 Gate 3.0 2 Drain 0.75 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta =

Ordering number ENN4755 N-Channel Junction Silicon FET 2SK2219 Capacitor Microphone Applications Features Package Dimensions Ultrasmall-sized package permitting 2SK2219- unit mm applied sets to be made small and slim. 2058A Especially suited for use in audio, telephone capaci- [2SK2219] tor microphones. Excellent voltage characteristic. 0.3 0.15 Excellent transien

Ordering number ENN5202 N-Channel Junction Silicon FET 2SK2218 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions Adoption of FBET process. unit mm Amateur radio equipment. 2125 UHF amplifiers, MIX, OSC, analog switches. [2SK2218] Large yfs . 4.5 Small Ciss. 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Source 2 Gate 0.75 3 Dra

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2225 Silicon N Channel MOS FET REJ03G1005-0200 (Previous ADE-208-140) Rev.2.00 Sep 07, 2005 Application High speed power switching Features High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003ZA-A (Package

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Data Sheet 2SK2225-80-E R07DS1275EJ0100 1500V - 2A - MOS FET Rev.1.00 Jun 22, 2015 High Speed Power Switching Features High breakdown voltage (V = 1500 V) DSS High speed switching Low drive current Outline RENESAS Package code PRSS0003ZD-A (Package name TO-3PF) D 1. Gate G 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2220, 2SK2221 Silicon N Channel MOS FET REJ03G1004-0200 (Previous ADE-208-1352) Rev.2.00 Sep 07, 2005 Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics

2SK2202 Silicon N Channel MOS FET REJ03G1002-0300 (Previous ADE-208-139) Rev.3.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003AD-A

Transistors Switching (800V, 3A) 2SK2294 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 10

Transistors Switching (450V, 7A) 2SK2299N FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 1

Silicon MOS FETs (Small Signal) 2SK2277 2SK2277 Silicon N-Channel MOS Unit mm For switching 1.5 0.1 4.5 0.1 1.6 0.2 Features Low ON-resistance RDS(on) 45 High-speed switching Downsizing of sets by mini-type package and automatic insertion by 0.4 0.08 0.4 0.04 0.5 0.08 magazine packing are available. 1.5 0.1 3.0 0.15 3 2 1 Absolute Maximum Ratings (Ta

Silicon MOS FETs (Small Signal) 2SK2211 2SK2211 Silicon N-Channel MOS Unit mm For switching 1.5 0.1 4.5 0.1 1.6 0.2 Features Low ON-resistance RDS(on) 45 High-speed switching Downsizing of sets by mini-type package and automatic insertion by 0.4 0.08 0.4 0.04 0.5 0.08 magazine packing are available. 1.5 0.1 3.0 0.15 3 2 1 Absolute Maximum Ratings (Ta

Power F-MOS FETs 2SK2210 2SK2210 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Control equipm

Power F-MOS FETs 2SK2276 2SK2276 Silicon N-Channel MOS Unit mm For switching 6.5 0.1 5.3 0.1 4.35 0.1 Features 3.0 0.1 Low ON-resistance RDS(on) High-speed switching 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25 C) Parameter Symbol Rating Unit 1 Gate 1 2 3 2 Drain Drain-Source breakdown voltage VDSS 60 V

2SK2272-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Features Outline Drawings High speed switching TO-3PF Low on-resistance No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof Applications Switching regulators UPS DC-DC converters General purpose power amplifier Maximum ratings and characteristics Equivalent ci

N-channel MOS-FET 2SK2253-01M FAP-IIA Series 250V 0,5 8A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv

N-channel MOS-FET 2SK2252-01L,S FAP-IIA Series 250V 0,5 8A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ

N-channel MOS-FET 2SK2223-01R FAP-IIA Series 500V 0,76 10A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Eq

FUJI POWER MOSFET 2SK2224-01R N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching 5.5 0.3 Low on-resistance 0.3 0.2 15.5 3.2 3.2+0.3 No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof 0.3 2.1 0.3 1.6 +0.2 1.1 0.1 0.2 3.5 Applications 0.2 0.2 5.45 5.45 0.6+0.2 Switc

2SK2255-01MR N-channel MOS-FET FAP-IIA Series 250V 0,18 18A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters www.DataSheet4U.com - General Purpose Power Amplifier > Maximum Ratings and

N-channel MOS-FET 2SK2251-01 FAP-IIA Series 250V 2 2A 20W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivale

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SK2207 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 900 V V 900 V I = 100 A, V = 0V DSS (BR) DSS D GS V 30 V I 100 nA V = 30V GSS GSS GS I 3I 100 A V = 900V, V = 0V D A DSS DS GS I 12 A V 2.0 3.0 4.0 V V = 10V, I = 1mA D (pulse) TH DS

SMD Type MOSFET N-Channel MOSFET 2SK2211 1.70 0.1 Features VDS (V) = 30V ID = 1A 0.42 0.1 RDS(ON) 0.75 (VGS = 4V) 0.46 0.1 RDS(ON) 0.6 (VGS = 10V) D G 1.Gate 2.Drain 3.Source S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous Drain Current ID 1 A

2SK2231 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Motor

isc N-Channel MOSFET Transistor 2SK2253-01M DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators ,DC-DC converter,Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drai

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK2221 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High efficiency switch

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK2258 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2236 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) Fast Switching Speed APPLICATIONS Switching regulators ,DC-DC converter,Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V

isc N-Channel MOSFET Transistor 2SK2274 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr

isc N-Channel MOSFET Transistor 2SK2237 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators ,DC-DC converter,Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain

isc N-Channel MOSFET Transistor 2SK2257-01 DESCRIPTION Drain Current I = 17A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

isc N-Channel MOSFET Transistor 2SK2299 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS

isc N-Channel MOSFET Transistor 2SK2224-01 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

isc N-Channel MOSFET Transistor 2SK2251-01 DESCRIPTION Drain Current I = 2A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

isc N-Channel MOSFET Transistor 2SK2291 DESCRIPTION Drain Current I = 45A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr

isc N-Channel MOSFET Transistor 2SK2257 DESCRIPTION Drain Current I = 17A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

isc N-Channel MOSFET Transistor 2SK2223-01 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor control UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAM