2SK3065T100 - описание и поиск аналогов

2SK3065 Transistors Small switching (60V, 2A) 2SK3065 Features External dimensions (Units mm) 1) Low on resistance. 2) High-speed switching. 4.5+0.2 -0.1 1.6 0.1 1.5 0.1 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. (1) (2) (3) 0.4+0.1 -0.05 5) Easy to use parallel. 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.

2SK3065 Transistors Small switching (60V, 2A) 2SK3065 Features External dimensions (Units mm) 1) Low on resistance. 2) High-speed switching. 4.5+0.2 -0.1 1.6 0.1 1.5 0.1 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. (1) (2) (3) 0.4+0.1 -0.05 5) Easy to use parallel. 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.1

2SK3065 Transistors Small switching (60V, 2A) 2SK3065 Features External dimensions (Units mm) 1) Low on resistance. 2) High-speed switching. 4.5+0.2 -0.1 1.6 0.1 1.5 0.1 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. (1) (2) (3) 0.4+0.1 -0.05 5) Easy to use parallel. 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.1

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3060 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3060 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3060 TO-220AB 2SK3060-S TO-262 FEATURES Low on-state resistance 2SK3060-ZJ TO-263 RDS(on)1 = 13 m MAX. (VGS = 10 V, ID

2SK3068 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3068 Chopper Regulator DC-DC Converter, and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.4 (typ.) High forward transfer admittance Yfs = 9.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 4.0 V (VDS =

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3069 Silicon N Channel MOS FET High Speed Power Switching REJ03G1062-1100 (Previous ADE-208-694I) Rev.11.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate 2. Drain (Flange) G 3. Source

This product complies with the RoHS Directive (EU 2002/95/EC). Silicon MOSFETs (Small Signal) 2SK3064 Silicon N-channel MOSFET Unit mm For switching circuit 0.15+0.10 0.3+0.1 0.05 0.0 For rechargeable buttery pack (Li+ ion buttery, etc.) 3 Features High gate-source voltage (Drain open) VGSO 1 2 Low gate threshold voltage Vth (0.65) (0.65) 1.3 0.1 2.0 0.2

isc N-Channel MOSFET Transistor 2SK3060-Z FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3068B FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

isc N-Channel MOSFET Transistor 2SK3060-S FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3060-ZJ FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

isc N-Channel MOSFET Transistor 2SK3068K FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

isc N-Channel MOSFET Transistor 2SK3069 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V =60V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3067 FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 5 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

isc N-Channel MOSFET Transistor 2SK3060 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V =60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d