Справочник MOSFET. 2SK890

 

2SK890 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK890
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 360 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для 2SK890

 

 

2SK890 Datasheet (PDF)

 ..1. Size:87K  toshiba
 2sk890.pdf

2SK890 2SK890

www.DataSheet4U.com

 9.1. Size:132K  1
 2sk895 2sk896.pdf

2SK890 2SK890

 9.2. Size:168K  1
 2sk899.pdf

2SK890 2SK890

 9.3. Size:134K  1
 2sk897-mr.pdf

2SK890 2SK890

 9.4. Size:53K  toshiba
 2sk891.pdf

2SK890 2SK890

 9.5. Size:57K  toshiba
 2sk894.pdf

2SK890 2SK890

 9.6. Size:137K  fuji
 2sk897-m.pdf

2SK890 2SK890

"2SK897M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK897M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK897M"Powered by ICminer.com Electronic-Library Service CopyRight 2003

 9.7. Size:59K  inchange semiconductor
 2sk892.pdf

2SK890 2SK890

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK892 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM R

 9.8. Size:303K  inchange semiconductor
 2sk895.pdf

2SK890 2SK890

isc N-Channel MOSFET Transistor 2SK895FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 9.9. Size:234K  inchange semiconductor
 2sk899.pdf

2SK890 2SK890

isc N-Channel MOSFET Transistor 2SK899DESCRIPTIONDrain Current I =18A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 9.10. Size:288K  inchange semiconductor
 2sk891.pdf

2SK890 2SK890

isc N-Channel MOSFET Transistor 2SK891FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 180m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 9.11. Size:303K  inchange semiconductor
 2sk896.pdf

2SK890 2SK890

isc N-Channel MOSFET Transistor 2SK896FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 9.12. Size:59K  inchange semiconductor
 2sk893.pdf

2SK890 2SK890

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK893 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) Fast Switching Speed APPLICATIONS High voltage. high speed power Switching. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 500 V DSS GSV G

 9.13. Size:279K  inchange semiconductor
 2sk897-mr.pdf

2SK890 2SK890

isc N-Channel MOSFET Transistor 2SK897-MRFEATURESDrain Current : I = 4.0A@ T =25D CDrain Source Voltage: V = 550V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 9.14. Size:198K  inchange semiconductor
 2sk894.pdf

2SK890 2SK890

isc N-Channel MOSFET Transistor 2SK894DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage.high speed power Switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vo

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