2SK3133S - описание и поиск аналогов

isc N-Channel MOSFET Transistor 2SK3133S FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) @VDS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

2SK3133(L),2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-720 (Z) Target Specification 1st. Edition February 1999 Features Low on-resistance RDS(on) = 7 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 2 3 1 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3133(L),2SK3133(S) Ab

isc N-Channel MOSFET Transistor 2SK3133L FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max)@ VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3130 Switching Regulator Applications Unit mm Reverse-recovery time trr = 85 ns Built-in high-speed flywheel diode Low drain-source ON resistance RDS (ON) = 1.12 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS =

2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3131 Chopper Regulator DC-DC Converter and Motor Drive Unit mm Applications Fast reverse recovery time trr = 105 ns (typ.) Built-in high-speed free-wheeling diode Low drain-source ON resistance RDS (ON) = 0.085 (typ.) High forward transfer admittance Yfs = 35 S (typ.) Low l

2SK3132 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3132 Chopper Regulator DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.07 (typ.) High forward transfer admittance Yfs = 33 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.4 to 3.4 V (VDS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3136 Silicon N Channel MOS FET High Speed Power Switching REJ03G1068-0400 (Previous ADE-208-696B) Rev.4.00 Sep 20, 2005 Features Low on-resistance RDS(on) =4.5 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate 2. Drain (Flange) G 3. Source

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3135(L), 2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1067-0400 (Previous ADE-208-695B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L

2SK3134(L), 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1066-0400 (Previous ADE-208-721B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 4 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

isc N-Channel MOSFET Transistor 2SK3130 FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V =600V(Min) DSS Static Drain-Source On-Resistance R = 1.55 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSO

isc N-Channel MOSFET Transistor 2SK313 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3136 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V =40V(Min) DSS Static Drain-Source On-Resistance R =5.8 m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3134L FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

isc N-Channel MOSFET Transistor 2SK3131 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.11 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3135S FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK3132 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 95m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK3134S FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

isc N-Channel MOSFET Transistor 2SK3135L FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d