Справочник MOSFET. 2SK3338-01

 

2SK3338-01 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK3338-01
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 340 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 100 ns
   Cossⓘ - Выходная емкость: 480 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.27 Ohm
   Тип корпуса: TO247

 Аналог (замена) для 2SK3338-01

 

 

2SK3338-01 Datasheet (PDF)

 ..1. Size:30K  fuji
 2sk3338-01.pdf

2SK3338-01

FUJI POWER MOS-FET2SK3338-01N-CHANNEL SILICON POWER MOS-FET FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators UPS (Uninterruptible Power Supply) DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Rating UnitEq

 7.1. Size:331K  inchange semiconductor
 2sk3338w.pdf

2SK3338-01 2SK3338-01

isc N-Channel MOSFET Transistor 2SK3338WFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 7.2. Size:286K  inchange semiconductor
 2sk3338n.pdf

2SK3338-01 2SK3338-01

isc N-Channel MOSFET Transistor 2SK3338NFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 8.1. Size:396K  1
 2sk3339-01.pdf

2SK3338-01 2SK3338-01

FUJI POWER MOS-FET2SK3339-01N-CHANNEL SILICON POWER MOS-FET11.60.2 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving powerAvalanche-proof Applications Switching regulatorsUPS (Uninterruptible Power Supply) DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Ratin

 8.2. Size:411K  1
 2sk3337-01.pdf

2SK3338-01 2SK3338-01

FUJI POWER MOS-FET2SK3337-01N-CHANNEL SILICON POWER MOS-FET11.60.2 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving powerAvalanche-proof Applications Switching regulatorsUPS (Uninterruptible Power Supply) DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25C unless otherwise

 8.3. Size:32K  sanyo
 2sk3335.pdf

2SK3338-01 2SK3338-01

Ordering number : ENN72162SK3335N-Channel Silicon MOSFET2SK3335Ultrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm 4V drive.2083B[2SK3335]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPunit : mm2092B[2SK3335]6.5 2.35.0 0.540.50.851 2 3

 8.4. Size:292K  panasonic
 2sk3333.pdf

2SK3338-01 2SK3338-01

MOS FET()2SK3333NMOSUnit : mm6.9 0.1 2.5 0.10.7 4.0 0.8 0.65 max. 0.45+0.10- 0.050.45+0.10- 0.051.05 0.052.5 0

 8.5. Size:286K  inchange semiconductor
 2sk3339n.pdf

2SK3338-01 2SK3338-01

isc N-Channel MOSFET Transistor 2SK3339NFEATURESDrain Current : I = 27A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.6. Size:330K  inchange semiconductor
 2sk3339w.pdf

2SK3338-01 2SK3338-01

isc N-Channel MOSFET Transistor 2SK3339WFEATURESDrain Current : I = 27A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.7. Size:331K  inchange semiconductor
 2sk3337w.pdf

2SK3338-01 2SK3338-01

isc N-Channel MOSFET Transistor 2SK3337WFEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.8. Size:286K  inchange semiconductor
 2sk3337n.pdf

2SK3338-01 2SK3338-01

isc N-Channel MOSFET Transistor 2SK3337NFEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top