2SK4066-1E - параметры транзистора MOSFET, его аналоги, datasheet

2SK4066-1E Datasheet (PDF)

..1. Size:285K onsemi
2sk4066-1e 2sk4066-dl-1e.pdf pdf_icon

Ordering number : ENA0225C2SK4066N-Channel Power MOSFEThttp://onsemi.com60V, 100A, 4.7m , TO-262-3L/TO-263-2LFeatures ON-resistance RDS(on)1=3.6m (typ.) Input capacitance Ciss=12500pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS

6.1. Size:52K sanyo
2sk4066-dl-e.pdf pdf_icon

Ordering number : ENA0225A 2SK4066SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4066ApplicationsFeatures Low ON-resistance. Load switching applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-

7.1. Size:377K sanyo
2sk4066.pdf pdf_icon

2SK4066Ordering number : ENA0225BSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4066ApplicationsFeatures ON-resistance RDS(on)1=3.6m (typ.) Input capacitance Ciss=12500pF (typ.) 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60

7.2. Size:357K inchange semiconductor
2sk4066b.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK4066BFEATURESDrain Current : I =100A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno