IRF9610 - параметры транзистора MOSFET, его аналоги, datasheet

IRF9610 Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: IRF9610
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 20 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.75 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 8 nC
   tr ⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 50 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
   Тип корпуса: TO220AB

Аналог (замена) для IRF9610

- подбор ⓘ MOSFET транзистора по параметрам

IRF9610 Datasheet (PDF)

..1. Size:447K international rectifier
irf9610 irf9611 irf9612 irf9613.pdf pdf_icon

..2. Size:1337K international rectifier
irf9610pbf.pdf pdf_icon

PD- 95413IRF9610PbF Lead-Freewww.irf.com 106/15/04IRF9610PbF2 www.irf.comIRF9610PbFwww.irf.com 3IRF9610PbF4 www.irf.comIRF9610PbFwww.irf.com 5IRF9610PbF6 www.irf.comIRF9610PbFwww.irf.com 7IRF9610PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

..3. Size:161K international rectifier
irf9610.pdf pdf_icon

..4. Size:286K samsung
irf9610 irf9611.pdf pdf_icon

..5. Size:190K vishay
irf9610 sihf9610.pdf pdf_icon

IRF9610, SiHF9610Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200 P-ChannelAvailableRDS(on) ()VGS = - 10 V 3.0 Fast SwitchingRoHS*Qg (Max.) (nC) 11COMPLIANT Ease of ParallelingQgs (nC) 7.0 Simple Drive RequirementsQgd (nC) 4.0 Lead (Pb)-free AvailableConfiguration SingleDESCRIPTIONSThe Power MOS

0.1. Size:288K international rectifier
irf9610s.pdf pdf_icon

PD - 95694IRF9610SPbF Lead-Free9/1/04Document Number: 91081 www.vishay.com1IRF9610SPbFDocument Number: 91081 www.vishay.com2IRF9610SPbFDocument Number: 91081 www.vishay.com3IRF9610SPbFDocument Number: 91081 www.vishay.com4IRF9610SPbFDocument Number: 91081 www.vishay.com5IRF9610SPbFDocument Number: 91081 www.vishay.com6IRF9610SPbFPeak Diode Re

0.2. Size:170K vishay
irf9610s sihf9610s.pdf pdf_icon

IRF9610S, SiHF9610SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 200Definition Surface MountRDS(on) ()VGS = - 10 V 3.0 Available in Tape and Reel Qg (Max.) (nC) 11 Dynamic dV/dt RatingQgs (nC) 7.0 P-Channel Fast SwitchingQgd (nC) 4.0 Ease of ParallelingConfiguration Single Si

9.1. Size:170K international rectifier
irf9640.pdf pdf_icon

9.2. Size:1353K international rectifier
irf9620pbf.pdf pdf_icon

PD- 95414IRF9620PbF Lead-Freewww.irf.com 106/16/04IRF9620PbF2 www.irf.comIRF9620PbFwww.irf.com 3IRF9620PbF4 www.irf.comIRF9620PbFwww.irf.com 5IRF9620PbF6 www.irf.comIRF9620PbFwww.irf.com 7IRF9620PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

9.3. Size:170K international rectifier
irf9640s.pdf pdf_icon

9.4. Size:160K international rectifier
irf9620.pdf pdf_icon

9.5. Size:1075K international rectifier
irf9620spbf.pdf pdf_icon

PD- 95787IRF9620SPbF Lead-Free06/8/05Document Number: 91083 www.vishay.com1IRF9620SPbFDocument Number: 91083 www.vishay.com2IRF9620SPbFDocument Number: 91083 www.vishay.com3IRF9620SPbFDocument Number: 91083 www.vishay.com4IRF9620SPbFDocument Number: 91083 www.vishay.com5IRF9620SPbFDocument Number: 91083 www.vishay.com6IRF9620SPbFPeak Diode Re

9.6. Size:165K international rectifier
irf9620s.pdf pdf_icon

9.7. Size:41K international rectifier
irf96xx irf95xx.pdf pdf_icon

9.8. Size:1045K international rectifier
irf9630spbf.pdf pdf_icon

PD- 95771IRF9630SPbF Lead-Free06/06/05Document Number: 91085 www.vishay.com1IRF9630SPbFDocument Number: 91085 www.vishay.com2IRF9630SPbFDocument Number: 91085 www.vishay.com3IRF9630SPbFDocument Number: 91085 www.vishay.com4IRF9630SPbFDocument Number: 91085 www.vishay.com5IRF9630SPbFDocument Number: 91085 www.vishay.com6IRF9630SPbFPeak Diode R

9.9. Size:175K international rectifier
irf9630.pdf pdf_icon

9.10. Size:2142K international rectifier
irf9630pbf.pdf pdf_icon

PD - 94958IRF9630PbF Lead-Free01/29/04Document Number: 91084 www.vishay.com1IRF9630PbFDocument Number: 91084 www.vishay.com2IRF9630PbFDocument Number: 91084 www.vishay.com3IRF9630PbFDocument Number: 91084 www.vishay.com4IRF9630PbFDocument Number: 91084 www.vishay.com5IRF9630PbFDocument Number: 91084 www.vishay.com6IRF9630PbFTO-220AB Package O

9.11. Size:999K international rectifier
irf9640spbf.pdf pdf_icon

PD - 95117AIRF9640SPbF Lead-Free06/09/05Document Number: 91087 www.vishay.com1IRF9640SPbFDocument Number: 91087 www.vishay.com2IRF9640SPbFDocument Number: 91087 www.vishay.com3IRF9640SPbFDocument Number: 91087 www.vishay.com4IRF9640SPbFDocument Number: 91087 www.vishay.com5IRF9640SPbFDocument Number: 91087 www.vishay.com6IRF9640SPbFPeak Diode

9.12. Size:2131K international rectifier
irf9640pbf.pdf pdf_icon

PD - 94981IRF9640PbF Lead-Free02/04/04Document Number: 91086 www.vishay.com1IRF9640PbFDocument Number: 91086 www.vishay.com2IRF9640PbFDocument Number: 91086 www.vishay.com3IRF9640PbFDocument Number: 91086 www.vishay.com4IRF9640PbFDocument Number: 91086 www.vishay.com5IRF9640PbFDocument Number: 91086 www.vishay.com6IRF9640PbFTO-220AB Package O

9.13. Size:179K international rectifier
irf9630s.pdf pdf_icon

9.14. Size:103K fairchild semi
irf9630 rf1s9630sm.pdf pdf_icon

IRF9630, RF1S9630SMData Sheet January 20026.5A, 200V, 0.800 Ohm, P-Channel Power FeaturesMOSFETs 6.5A, 200VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown a

9.15. Size:103K fairchild semi
irf9640 rf1s9640sm.pdf pdf_icon

IRF9640, RF1S9640SMData Sheet January 200211A, 200V, 0.500 Ohm, P-Channel Power FeaturesMOSFETs 11A, 200VThese are P-Channel enhancement mode silicon-gate rDS(ON) = 0.500power field-effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

9.16. Size:490K samsung
irf9240 irf9241 irf9242 irf9243 irfp9240 irfp9241 irfp9242 irfp9243 irf9640 irf9641 irf9642 irf9643.pdf pdf_icon

9.17. Size:519K samsung
irfp9240-43 irf9240-43 irf9640-43.pdf pdf_icon

9.18. Size:504K samsung
irf9230 irf9231 irf9232 irf9233 irfp9230 irfp9231 irfp9232 irfp9233 irf9630 irf9631 irf9632 irf9633.pdf pdf_icon

9.19. Size:519K samsung
irfp9230-33 irf9230-33 irf9630-33.pdf pdf_icon

9.20. Size:197K vishay
irf9630pbf sihf9630.pdf pdf_icon

IRF9630, SiHF9630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) (Max.) ()VGS = - 10 V 0.80RoHS* P-ChannelQg (Max.) (nC) 29COMPLIANT Fast SwitchingQgs (nC) 5.4 Ease of ParallelingQgd (nC) 15 Simple Drive RequirementsConfiguration Single Compliant to RoH

9.21. Size:194K vishay
irf9620spbf sihf9620s.pdf pdf_icon

IRF9620S, SiHF9620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 200 Surface Mount RDS(on) ()VGS = - 10 V 1.5 Available in Tape and ReelQg (Max.) (nC) 22 Dynamic dV/dt Rating P-ChannelQgs (nC) 12 Fast SwitchingQgd (nC) 10 Ease of ParallelingConfiguration Single Simp

9.22. Size:196K vishay
irf9640pbf sihf9640.pdf pdf_icon

IRF9640, SiHF9640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 44 Fast SwitchingQgs (nC) 7.1 Ease of ParallelingQgd (nC) 27 Simple Drive RequirementsConfiguration Single Compliant to RoHS Direc

9.23. Size:200K vishay
irf9620 sihf9620.pdf pdf_icon

IRF9620, SiHF9620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available P-ChannelRDS(on) ()VGS = - 10 V 1.5RoHS* Fast SwitchingQg (Max.) (nC) 22COMPLIANT Ease of ParallelingQgs (nC) 12Qgd (nC) 10 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECSDESCRIPTIONT

9.24. Size:169K vishay
irf9640s sihf9640s irf9640l sihf9640l.pdf pdf_icon

IRF9640S, SiHF9640S, IRF9640L, SiHF9640LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 200 Definition Surface MountRDS(on) ()VGS = - 10 V 0.50 Available in Tape and Reel Qg (Max.) (nC) 44 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 7.1 P-ChannelQgd (nC) 27 Fast Switching

9.25. Size:192K vishay
irf9640l irf9640lpbf.pdf pdf_icon

9.26. Size:169K vishay
irf9620s sihf9620s.pdf pdf_icon

9.27. Size:196K vishay
irf9640 sihf9640.pdf pdf_icon

9.28. Size:197K vishay
irf9630 sihf9630.pdf pdf_icon

9.29. Size:172K vishay
irf9630spbf sihf9630s.pdf pdf_icon

IRF9630S, SiHF9630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 200 Surface MountRDS(on) ()VGS = - 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 29 Dynamic dV/dt RatingQgs (nC) 5.4 Repetitive Avalanche Rated P-ChannelQgd (nC) 15 Fast SwitchingConfiguration Single

9.30. Size:171K vishay
irf9630s sihf9630s.pdf pdf_icon

9.31. Size:195K vishay
irf9640spbf sihf9640l sihf9640s.pdf pdf_icon

9.32. Size:69K harris semi
irf9620 irf9621 irf9622 irf9623.pdf pdf_icon

IRF9620, IRF9621,S E M I C O N D U C T O RIRF9622, IRF9623-3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm,July 1998 P-Channel Power MOSFETsFeatures Description -3A and -3.5A, -150V and -200V These are P-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 1.5 and 2.4MOSFETs designed, tested, and guaranteed to withst

9.33. Size:406K harris semi
irf9630 irf9631 irf9632 irf9633 rf1s9630.pdf pdf_icon