IRF9610 - аналоги, параметры транзистора - Справочник транзисторов

Аналоги IRF9610. Основные параметры

   Наименование производителя: IRF9610
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 20 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.75 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 50 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
   Тип корпуса: TO220AB

Аналог (замена) для IRF9610

- подбор ⓘ MOSFET транзистора по параметрам

IRF9610 даташит

..1. Size:447K international rectifier
irf9610 irf9611 irf9612 irf9613.pdf pdf_icon

..2. Size:1337K international rectifier
irf9610pbf.pdf pdf_icon

PD- 95413 IRF9610PbF Lead-Free www.irf.com 1 06/15/04 IRF9610PbF 2 www.irf.com IRF9610PbF www.irf.com 3 IRF9610PbF 4 www.irf.com IRF9610PbF www.irf.com 5 IRF9610PbF 6 www.irf.com IRF9610PbF www.irf.com 7 IRF9610PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.13

..3. Size:161K international rectifier
irf9610.pdf pdf_icon

..4. Size:286K samsung
irf9610 irf9611.pdf pdf_icon

..5. Size:190K vishay
irf9610 sihf9610.pdf pdf_icon

IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 P-Channel Available RDS(on) ( )VGS = - 10 V 3.0 Fast Switching RoHS* Qg (Max.) (nC) 11 COMPLIANT Ease of Paralleling Qgs (nC) 7.0 Simple Drive Requirements Qgd (nC) 4.0 Lead (Pb)-free Available Configuration Single DESCRIPTION S The Power MOS

0.1. Size:288K international rectifier
irf9610s.pdf pdf_icon

PD - 95694 IRF9610SPbF Lead-Free 9/1/04 Document Number 91081 www.vishay.com 1 IRF9610SPbF Document Number 91081 www.vishay.com 2 IRF9610SPbF Document Number 91081 www.vishay.com 3 IRF9610SPbF Document Number 91081 www.vishay.com 4 IRF9610SPbF Document Number 91081 www.vishay.com 5 IRF9610SPbF Document Number 91081 www.vishay.com 6 IRF9610SPbF Peak Diode Re

0.2. Size:170K vishay
irf9610s sihf9610s.pdf pdf_icon

IRF9610S, SiHF9610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 200 Definition Surface Mount RDS(on) ( )VGS = - 10 V 3.0 Available in Tape and Reel Qg (Max.) (nC) 11 Dynamic dV/dt Rating Qgs (nC) 7.0 P-Channel Fast Switching Qgd (nC) 4.0 Ease of Paralleling Configuration Single Si

9.1. Size:170K international rectifier
irf9640.pdf pdf_icon

9.2. Size:1353K international rectifier
irf9620pbf.pdf pdf_icon

PD- 95414 IRF9620PbF Lead-Free www.irf.com 1 06/16/04 IRF9620PbF 2 www.irf.com IRF9620PbF www.irf.com 3 IRF9620PbF 4 www.irf.com IRF9620PbF www.irf.com 5 IRF9620PbF 6 www.irf.com IRF9620PbF www.irf.com 7 IRF9620PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.13

9.3. Size:170K international rectifier
irf9640s.pdf pdf_icon

9.4. Size:160K international rectifier
irf9620.pdf pdf_icon

9.5. Size:1075K international rectifier
irf9620spbf.pdf pdf_icon

PD- 95787 IRF9620SPbF Lead-Free 06/8/05 Document Number 91083 www.vishay.com 1 IRF9620SPbF Document Number 91083 www.vishay.com 2 IRF9620SPbF Document Number 91083 www.vishay.com 3 IRF9620SPbF Document Number 91083 www.vishay.com 4 IRF9620SPbF Document Number 91083 www.vishay.com 5 IRF9620SPbF Document Number 91083 www.vishay.com 6 IRF9620SPbF Peak Diode Re

9.6. Size:165K international rectifier
irf9620s.pdf pdf_icon

9.7. Size:41K international rectifier
irf96xx irf95xx.pdf pdf_icon

9.8. Size:1045K international rectifier
irf9630spbf.pdf pdf_icon

PD- 95771 IRF9630SPbF Lead-Free 06/06/05 Document Number 91085 www.vishay.com 1 IRF9630SPbF Document Number 91085 www.vishay.com 2 IRF9630SPbF Document Number 91085 www.vishay.com 3 IRF9630SPbF Document Number 91085 www.vishay.com 4 IRF9630SPbF Document Number 91085 www.vishay.com 5 IRF9630SPbF Document Number 91085 www.vishay.com 6 IRF9630SPbF Peak Diode R

9.9. Size:175K international rectifier
irf9630.pdf pdf_icon

9.10. Size:2142K international rectifier
irf9630pbf.pdf pdf_icon

PD - 94958 IRF9630PbF Lead-Free 01/29/04 Document Number 91084 www.vishay.com 1 IRF9630PbF Document Number 91084 www.vishay.com 2 IRF9630PbF Document Number 91084 www.vishay.com 3 IRF9630PbF Document Number 91084 www.vishay.com 4 IRF9630PbF Document Number 91084 www.vishay.com 5 IRF9630PbF Document Number 91084 www.vishay.com 6 IRF9630PbF TO-220AB Package O

9.11. Size:999K international rectifier
irf9640spbf.pdf pdf_icon

PD - 95117A IRF9640SPbF Lead-Free 06/09/05 Document Number 91087 www.vishay.com 1 IRF9640SPbF Document Number 91087 www.vishay.com 2 IRF9640SPbF Document Number 91087 www.vishay.com 3 IRF9640SPbF Document Number 91087 www.vishay.com 4 IRF9640SPbF Document Number 91087 www.vishay.com 5 IRF9640SPbF Document Number 91087 www.vishay.com 6 IRF9640SPbF Peak Diode

9.12. Size:2131K international rectifier
irf9640pbf.pdf pdf_icon

PD - 94981 IRF9640PbF Lead-Free 02/04/04 Document Number 91086 www.vishay.com 1 IRF9640PbF Document Number 91086 www.vishay.com 2 IRF9640PbF Document Number 91086 www.vishay.com 3 IRF9640PbF Document Number 91086 www.vishay.com 4 IRF9640PbF Document Number 91086 www.vishay.com 5 IRF9640PbF Document Number 91086 www.vishay.com 6 IRF9640PbF TO-220AB Package O

9.13. Size:179K international rectifier
irf9630s.pdf pdf_icon

9.14. Size:103K fairchild semi
irf9630 rf1s9630sm.pdf pdf_icon

IRF9630, RF1S9630SM Data Sheet January 2002 6.5A, 200V, 0.800 Ohm, P-Channel Power Features MOSFETs 6.5A, 200V These are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800 field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown a

9.15. Size:103K fairchild semi
irf9640 rf1s9640sm.pdf pdf_icon

IRF9640, RF1S9640SM Data Sheet January 2002 11A, 200V, 0.500 Ohm, P-Channel Power Features MOSFETs 11A, 200V These are P-Channel enhancement mode silicon-gate rDS(ON) = 0.500 power field-effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

9.16. Size:490K samsung
irf9240 irf9241 irf9242 irf9243 irfp9240 irfp9241 irfp9242 irfp9243 irf9640 irf9641 irf9642 irf9643.pdf pdf_icon

9.17. Size:519K samsung
irfp9240-43 irf9240-43 irf9640-43.pdf pdf_icon

9.18. Size:504K samsung
irf9230 irf9231 irf9232 irf9233 irfp9230 irfp9231 irfp9232 irfp9233 irf9630 irf9631 irf9632 irf9633.pdf pdf_icon

9.19. Size:519K samsung
irfp9230-33 irf9230-33 irf9630-33.pdf pdf_icon

9.20. Size:197K vishay
irf9630pbf sihf9630.pdf pdf_icon

IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) (Max.) ( )VGS = - 10 V 0.80 RoHS* P-Channel Qg (Max.) (nC) 29 COMPLIANT Fast Switching Qgs (nC) 5.4 Ease of Paralleling Qgd (nC) 15 Simple Drive Requirements Configuration Single Compliant to RoH

9.21. Size:194K vishay
irf9620spbf sihf9620s.pdf pdf_icon

IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 200 Surface Mount RDS(on) ( )VGS = - 10 V 1.5 Available in Tape and Reel Qg (Max.) (nC) 22 Dynamic dV/dt Rating P-Channel Qgs (nC) 12 Fast Switching Qgd (nC) 10 Ease of Paralleling Configuration Single Simp

9.22. Size:196K vishay
irf9640pbf sihf9640.pdf pdf_icon

IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.50 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 44 Fast Switching Qgs (nC) 7.1 Ease of Paralleling Qgd (nC) 27 Simple Drive Requirements Configuration Single Compliant to RoHS Direc

9.23. Size:200K vishay
irf9620 sihf9620.pdf pdf_icon

IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available P-Channel RDS(on) ( )VGS = - 10 V 1.5 RoHS* Fast Switching Qg (Max.) (nC) 22 COMPLIANT Ease of Paralleling Qgs (nC) 12 Qgd (nC) 10 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC S DESCRIPTION T

9.24. Size:169K vishay
irf9640s sihf9640s irf9640l sihf9640l.pdf pdf_icon

9.25. Size:192K vishay
irf9640l irf9640lpbf.pdf pdf_icon

9.26. Size:169K vishay
irf9620s sihf9620s.pdf pdf_icon

9.27. Size:196K vishay
irf9640 sihf9640.pdf pdf_icon

9.28. Size:197K vishay
irf9630 sihf9630.pdf pdf_icon

9.29. Size:172K vishay
irf9630spbf sihf9630s.pdf pdf_icon

IRF9630S, SiHF9630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 200 Surface Mount RDS(on) ( )VGS = - 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 29 Dynamic dV/dt Rating Qgs (nC) 5.4 Repetitive Avalanche Rated P-Channel Qgd (nC) 15 Fast Switching Configuration Single

9.30. Size:171K vishay
irf9630s sihf9630s.pdf pdf_icon

9.31. Size:195K vishay
irf9640spbf sihf9640l sihf9640s.pdf pdf_icon

9.32. Size:69K harris semi
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IRF9620, IRF9621, S E M I C O N D U C T O R IRF9622, IRF9623 -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, July 1998 P-Channel Power MOSFETs Features Description -3A and -3.5A, -150V and -200V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 1.5 and 2.4 MOSFETs designed, tested, and guaranteed to withst

9.33. Size:406K harris semi
irf9630 irf9631 irf9632 irf9633 rf1s9630.pdf pdf_icon