PD- 95413IRF9610PbF Lead-Freewww.irf.com 106/15/04IRF9610PbF2 www.irf.comIRF9610PbFwww.irf.com 3IRF9610PbF4 www.irf.comIRF9610PbFwww.irf.com 5IRF9610PbF6 www.irf.comIRF9610PbFwww.irf.com 7IRF9610PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

IRF9610, SiHF9610Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200 P-ChannelAvailableRDS(on) ()VGS = - 10 V 3.0 Fast SwitchingRoHS*Qg (Max.) (nC) 11COMPLIANT Ease of ParallelingQgs (nC) 7.0 Simple Drive RequirementsQgd (nC) 4.0 Lead (Pb)-free AvailableConfiguration SingleDESCRIPTIONSThe Power MOS

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IRF9610S, SiHF9610SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 200Definition Surface MountRDS(on) ()VGS = - 10 V 3.0 Available in Tape and Reel Qg (Max.) (nC) 11 Dynamic dV/dt RatingQgs (nC) 7.0 P-Channel Fast SwitchingQgd (nC) 4.0 Ease of ParallelingConfiguration Single Si

PD- 95414IRF9620PbF Lead-Freewww.irf.com 106/16/04IRF9620PbF2 www.irf.comIRF9620PbFwww.irf.com 3IRF9620PbF4 www.irf.comIRF9620PbFwww.irf.com 5IRF9620PbF6 www.irf.comIRF9620PbFwww.irf.com 7IRF9620PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

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PD- 95771IRF9630SPbF Lead-Free06/06/05Document Number: 91085 www.vishay.com1IRF9630SPbFDocument Number: 91085 www.vishay.com2IRF9630SPbFDocument Number: 91085 www.vishay.com3IRF9630SPbFDocument Number: 91085 www.vishay.com4IRF9630SPbFDocument Number: 91085 www.vishay.com5IRF9630SPbFDocument Number: 91085 www.vishay.com6IRF9630SPbFPeak Diode R

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IRF9630, RF1S9630SMData Sheet January 20026.5A, 200V, 0.800 Ohm, P-Channel Power FeaturesMOSFETs 6.5A, 200VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown a

IRF9640, RF1S9640SMData Sheet January 200211A, 200V, 0.500 Ohm, P-Channel Power FeaturesMOSFETs 11A, 200VThese are P-Channel enhancement mode silicon-gate rDS(ON) = 0.500power field-effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

IRF9630, SiHF9630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) (Max.) ()VGS = - 10 V 0.80RoHS* P-ChannelQg (Max.) (nC) 29COMPLIANT Fast SwitchingQgs (nC) 5.4 Ease of ParallelingQgd (nC) 15 Simple Drive RequirementsConfiguration Single Compliant to RoH

IRF9620S, SiHF9620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 200 Surface Mount RDS(on) ()VGS = - 10 V 1.5 Available in Tape and ReelQg (Max.) (nC) 22 Dynamic dV/dt Rating P-ChannelQgs (nC) 12 Fast SwitchingQgd (nC) 10 Ease of ParallelingConfiguration Single Simp

IRF9640, SiHF9640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 44 Fast SwitchingQgs (nC) 7.1 Ease of ParallelingQgd (nC) 27 Simple Drive RequirementsConfiguration Single Compliant to RoHS Direc

IRF9620, SiHF9620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available P-ChannelRDS(on) ()VGS = - 10 V 1.5RoHS* Fast SwitchingQg (Max.) (nC) 22COMPLIANT Ease of ParallelingQgs (nC) 12Qgd (nC) 10 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECSDESCRIPTIONT

IRF9640S, SiHF9640S, IRF9640L, SiHF9640LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 200 Definition Surface MountRDS(on) ()VGS = - 10 V 0.50 Available in Tape and Reel Qg (Max.) (nC) 44 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 7.1 P-ChannelQgd (nC) 27 Fast Switching

IRF9640S, SiHF9640S, IRF9640L, SiHF9640LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 200 Definition Surface MountRDS(on) ()VGS = - 10 V 0.50 Available in Tape and Reel Qg (Max.) (nC) 44 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 7.1 P-ChannelQgd (nC) 27 Fast Switching

IRF9620S, SiHF9620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 200 Surface Mount RDS(on) ()VGS = - 10 V 1.5 Available in Tape and ReelQg (Max.) (nC) 22 Dynamic dV/dt Rating P-ChannelQgs (nC) 12 Fast SwitchingQgd (nC) 10 Ease of ParallelingConfiguration Single Simp

IRF9640, SiHF9640Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 44 Fast SwitchingQgs (nC) 7.1 Ease of ParallelingQgd (nC) 27 Simple Drive RequirementsConfiguration Single Compliant to RoHS Direc

IRF9630, SiHF9630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) (Max.) ()VGS = - 10 V 0.80RoHS* P-ChannelQg (Max.) (nC) 29COMPLIANT Fast SwitchingQgs (nC) 5.4 Ease of ParallelingQgd (nC) 15 Simple Drive RequirementsConfiguration Single Compliant to RoH

IRF9630S, SiHF9630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 200 Surface MountRDS(on) ()VGS = - 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 29 Dynamic dV/dt RatingQgs (nC) 5.4 Repetitive Avalanche Rated P-ChannelQgd (nC) 15 Fast SwitchingConfiguration Single

IRF9630S, SiHF9630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 200 Surface MountRDS(on) ()VGS = - 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 29 Dynamic dV/dt RatingQgs (nC) 5.4 Repetitive Avalanche Rated P-ChannelQgd (nC) 15 Fast SwitchingConfiguration Single

IRF9640S, SiHF9640S, IRF9640L, SiHF9640LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 200 Definition Surface MountRDS(on) ()VGS = - 10 V 0.50 Available in Tape and Reel Qg (Max.) (nC) 44 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 7.1 P-ChannelQgd (nC) 27 Fast Switching

IRF9620, IRF9621,S E M I C O N D U C T O RIRF9622, IRF9623-3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm,July 1998 P-Channel Power MOSFETsFeatures Description -3A and -3.5A, -150V and -200V These are P-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 1.5 and 2.4MOSFETs designed, tested, and guaranteed to withst