2SK529 - описание и поиск аналогов

isc N-Channel MOSFET Transistor 2SK529 DESCRIPTION Drain Current I =2A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor c

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2SK522 Silicon N-Channel Junction FET Application VHF amplifier, Mixer, local oscillator Outline SPAK 1. Gate 1 2 2. Source 3 3. Drain 2SK522 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Gate to drain voltage VGDO 30 V Gate current IG 10 mA Drain current ID 20 mA Channel power dissipation Pch 200 mW Channel temperature Tch 150 C Storage temperature T

isc N-Channel MOSFET Transistor 2SK528 DESCRIPTION Drain Current I =2A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor c

isc N-Channel MOSFET Transistor 2SK526 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for low voltage,high speed applications, such as off-line switching power supplies

isc N-Channel MOSFET Transistor 2SK525 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =150V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for low voltage,high speed applications, such as off-line switching power supplies