2SK762A. Аналоги и основные параметры
Наименование производителя: 2SK762A
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 450 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
ton ⓘ - Время включения: 30 ns
Cossⓘ - Выходная емкость: 75 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
Тип корпуса: TO220F
Аналог (замена) для 2SK762A
- подборⓘ MOSFET транзистора по параметрам
2SK762A даташит
8.1. Size:234K inchange semiconductor
2sk762.pdf 

isc N-Channel MOSFET Transistor 2SK762 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver
9.3. Size:237K inchange semiconductor
2sk768.pdf 

isc N-Channel MOSFET Transistor 2SK768 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve
9.4. Size:234K inchange semiconductor
2sk767.pdf 

isc N-Channel MOSFET Transistor 2SK767 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver
9.5. Size:234K inchange semiconductor
2sk769.pdf 

isc N-Channel MOSFET Transistor 2SK769 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve
9.6. Size:237K inchange semiconductor
2sk764a.pdf 

isc N-Channel MOSFET Transistor 2SK764A DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conv
9.7. Size:234K inchange semiconductor
2sk766.pdf 

isc N-Channel MOSFET Transistor 2SK766 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver
9.8. Size:235K inchange semiconductor
2sk765.pdf 

isc N-Channel MOSFET Transistor 2SK765 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conv
9.9. Size:242K inchange semiconductor
2sk765a.pdf 

isc N-Channel MOSFET Transistor 2SK765A DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, con
9.10. Size:237K inchange semiconductor
2sk764.pdf 

isc N-Channel MOSFET Transistor 2SK764 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve
9.11. Size:235K inchange semiconductor
2sk763.pdf 

isc N-Channel MOSFET Transistor 2SK763 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver
Другие MOSFET... 2SK557
, 2SK565
, 2SK568
, 2SK596S-B
, 2SK528
, 2SK735
, 2SK738-Z
, 2SK762
, RFP50N06
, 2SK764
, 2SK764A
, 2SK765
, 2SK765A
, 2SK768
, 2SK769
, 2SK1225
, 2SK1244
.
History: VN0104ND
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