2SK1275. Аналоги и основные параметры
Наименование производителя: 2SK1275
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 900 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 260 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 7 Ohm
Тип корпуса: TO220FM
Аналог (замена) для 2SK1275
- подборⓘ MOSFET транзистора по параметрам
2SK1275 даташит
8.5. Size:200K fuji
2sk1279.pdf 
N-channel MOS-FET 2SK1279 F-V Series 500V 0,58 15A 125W > Features > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V 500
8.6. Size:189K fuji
2sk1278.pdf 
N-channel MOS-FET 2SK1278 F-V Series 500V 1,1 10A 100W > Features > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V 500 V
8.7. Size:206K fuji
2sk1277.pdf 
N-channel MOS-FET 2SK1277 F-V Series 250V 0,12 30A 150W > Features > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V 250
8.9. Size:1350K kexin
2sk1273.pdf 
SMD Type MOSFET N-Channel MOSFET 2SK1273 1.70 0.1 Features VDS (V) = 60V ID = 2 A 0.42 0.1 0.46 0.1 RDS(ON) 1 (VGS = 4V) RDS(ON) 0.65 (VGS = 10V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 Continuous Drain Current ID 2 A Pulse
8.10. Size:203K inchange semiconductor
2sk1279.pdf 
isc N-Channel MOSFET Transistor 2SK1279 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNI SYMBOL ARAMETER VALUE T V
8.11. Size:203K inchange semiconductor
2sk1278.pdf 
isc N-Channel MOSFET Transistor 2SK1278 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNI SYMBOL ARAMETER VALUE T V
8.12. Size:203K inchange semiconductor
2sk1277.pdf 
isc N-Channel MOSFET Transistor 2SK1277 DESCRIPTION Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNI SYMBOL ARAMETER VALUE T V Drain-Source Voltage (V =0)
Другие IGBT... 2SK1244, 2SK1246, 2SK1248, 2SK1249, 2SK1250, 2SK1261, 2SK1268, 2SK1269, IRF1405, 2SK2411-Z, 2SK2414-Z, 2SK2415-Z, 2SK2475, 2SK2499-Z, 2SK2503TL, 2SK2504TL, 2SK2513-Z
