SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2475Case : FTO-220(Unit : mm)(F12F50VX2)500V 12AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.APPLICATIONSwitching power supply of AC 100V inputHigh voltage power supplyInverter

isc N-Channel MOSFET Transistor 2SK2475DESCRIPTIONDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS

N-channel MOS-FET2SK2471-01FAP-II Series 300V 0,53 10A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2479SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2479 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high voltage switching applications.10.6 MAX. 4.8 MAX.FEATURES 3.6 0.21.3 0.210.0 Low On-ResistanceRDS(on) = 7.5 (VGS = 10 V, ID = 2.0 A) Low Cis

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2477SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2477 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES 4.7 MAX.15.7 MAX. 3.20.21.5 Low On-ResistanceRDS (on) = 1.0 (VGS = 10 V, ID = 5.0 A) 4 Low Ciss Ciss = 2 950

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2476SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2476 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES10.00.3 4.50.23.20.2 Low On-Resistance2.70.2RDS (on) = 5.0 (VGS = 10 V, ID = 2.0 A) Low Ciss Ciss = 59

MOSFET / Pwer MOSFETs MOSFET Pwer MOSFETF II F II F II F II Hi h p d witchin Av l nch r t d2 VDSS ID ID (pulse) RDS (on) PD VGSS VGS (th) 1Device type Max. Typ. Package Net massVolts Amps. Amps. Ohms () Watts V

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2478SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2478 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES10.00.3 4.50.23.20.2 Low On-Resistance2.70.2RDS (on) = 7.5 (VGS = 10 V, ID = 1.0 A) Low Ciss Ciss = 48

N-channel MOS-FET2SK2473-01FAP-II Series 300V 0,2 20A 125W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv

Power F-MOS FETs 2SK24742SK2474Silicon N-Channel MOSUnit : mmFor high-speed switching6.5 0.15.3 0.14.35 0.1 Features3.0 0.1Low ON-resistance RDS(on)High-speed switchingHigh drain-source voltage (VDSS)1.0 0.10.85 0.1 0.75 0.1 0.5 0.14.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25C)Parameter Symbol Rating Unit1 : Gate1 2 32 : Drai