2SK2562-01R
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK2562-01R
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 80
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 7
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 110
ns
Cossⓘ - Выходная емкость: 140
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.2
Ohm
Тип корпуса:
TO3PF
Аналог (замена) для 2SK2562-01R
2SK2562-01R
Datasheet (PDF)
..1. Size:137K fuji
2sk2562-01r.pdf 
N-channel MOS-FET2SK2562-01RFAP-II Series 800V 2,2 7A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiva
8.1. Size:59K renesas
2sk2568.pdf 
2SK2568 Silicon N Channel MOS FET REJ03G1017-0300 (Previous: ADE-208-1363) Rev.3.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1. GateG2. Drain(Flang
8.2. Size:104K renesas
2sk2569.pdf 
2SK2569 Silicon N Channel MOS FET REJ03G1018-0300 Rev.3.00 Dec 27, 2006 Application High speed power switching Features Low on-resistance. RDS(on) = 2.6 max. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)D31G 1. Source22. Gate3. DrainSNote:
8.3. Size:125K fuji
2sk2561-01r.pdf 
N-channel MOS-FET2SK2561-01RFAP-II Series 600V 1,2 9A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristi
8.4. Size:246K shindengen
2sk2564.pdf 
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2564Case : E-packCase : FTO-220(Unit : mm)(F8F60VX2)600V 8AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.APPLICATION Switching p
8.5. Size:252K shindengen
2sk2563 f4f60vx2.pdf 
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2563Case : E-packCase : FTO-220(Unit : mm)(F4F60VX2)600V4AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.APPLICATION Switching po
8.6. Size:241K inchange semiconductor
2sk2564.pdf 
isc N-Channel MOSFET Transistor 2SK2564DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high efficiency switch mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PAR
Другие MOSFET... IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
