IRF9620S - описание и поиск аналогов

PD- 95787 IRF9620SPbF Lead-Free 06/8/05 Document Number 91083 www.vishay.com 1 IRF9620SPbF Document Number 91083 www.vishay.com 2 IRF9620SPbF Document Number 91083 www.vishay.com 3 IRF9620SPbF Document Number 91083 www.vishay.com 4 IRF9620SPbF Document Number 91083 www.vishay.com 5 IRF9620SPbF Document Number 91083 www.vishay.com 6 IRF9620SPbF Peak Diode Re

IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 200 Surface Mount RDS(on) ( )VGS = - 10 V 1.5 Available in Tape and Reel Qg (Max.) (nC) 22 Dynamic dV/dt Rating P-Channel Qgs (nC) 12 Fast Switching Qgd (nC) 10 Ease of Paralleling Configuration Single Simp

IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 200 Surface Mount RDS(on) ( )VGS = - 10 V 1.5 Available in Tape and Reel Qg (Max.) (nC) 22 Dynamic dV/dt Rating P-Channel Qgs (nC) 12 Fast Switching Qgd (nC) 10 Ease of Paralleling Configuration Single Simp

PD- 95414 IRF9620PbF Lead-Free www.irf.com 1 06/16/04 IRF9620PbF 2 www.irf.com IRF9620PbF www.irf.com 3 IRF9620PbF 4 www.irf.com IRF9620PbF www.irf.com 5 IRF9620PbF 6 www.irf.com IRF9620PbF www.irf.com 7 IRF9620PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.13

IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available P-Channel RDS(on) ( )VGS = - 10 V 1.5 RoHS* Fast Switching Qg (Max.) (nC) 22 COMPLIANT Ease of Paralleling Qgs (nC) 12 Qgd (nC) 10 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC S DESCRIPTION T

IRF9620, IRF9621, S E M I C O N D U C T O R IRF9622, IRF9623 -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, July 1998 P-Channel Power MOSFETs Features Description -3A and -3.5A, -150V and -200V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 1.5 and 2.4 MOSFETs designed, tested, and guaranteed to withst