Справочник MOSFET. 2SK2653-01R

 

2SK2653-01R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK2653-01R
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 80 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 80 ns
   Cossⓘ - Выходная емкость: 130 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
   Тип корпуса: TO3PF

 Аналог (замена) для 2SK2653-01R

 

 

2SK2653-01R Datasheet (PDF)

 ..1. Size:304K  fuji
2sk2653-01r.pdf

2SK2653-01R
2SK2653-01R

N-channel MOS-FET2SK2653-01RFAP-IIS Series 900V 2,5 6A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characterist

 8.1. Size:30K  panasonic
2sk2659.pdf

2SK2653-01R
2SK2653-01R

Power F-MOS FETs 2SK26592SK2659Silicon N-Channel Power F-MOSUnit : mm5.0 0.1 Features10.0 0.2 1.0 Avalanche energy capability guaranteed High-speed switching90 Low ON-resistance No secondary breakdown 1.2 0.1 C1.02.25 0.2 Low-voltage drive0.65 0.10.35 0.1 1.05 0.1 Radial taping possible0.55 0.10.55 0.1 ApplicationsNon-contact relayNo

 8.2. Size:327K  fuji
2sk2651-01mr.pdf

2SK2653-01R
2SK2653-01R

N-channel MOS-FET2SK2651-01MRFAP-IIS Series 900V 2,5 6A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteris

 8.3. Size:267K  fuji
2sk2654-01.pdf

2SK2653-01R
2SK2653-01R

N-channel MOS-FET2SK2654-01FAP-IIS Series 900V 2 8A 150W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristic

 8.4. Size:291K  fuji
2sk2655-01r.pdf

2SK2653-01R
2SK2653-01R

N-channel MOS-FET2SK2655-01RFAP-IIS Series 900V 2 8A 100W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristi

 8.5. Size:312K  fuji
2sk2652-01.pdf

2SK2653-01R
2SK2653-01R

N-channel MOS-FET2SK2652-01FAP-IIS Series 900V 2,5 6A 125W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characterist

 8.6. Size:257K  inchange semiconductor
2sk2654.pdf

2SK2653-01R
2SK2653-01R

isc N-Channel MOSFET Transistor 2SK2654FEATURESDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS(T =

 8.7. Size:251K  inchange semiconductor
2sk2652.pdf

2SK2653-01R
2SK2653-01R

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2652FEATURESDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies andgeneral purpose applications.

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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