Справочник MOSFET. 2SK2725

 

2SK2725 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK2725
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 13.5 nC
   trⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 250 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.6 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для 2SK2725

 

 

2SK2725 Datasheet (PDF)

 ..1. Size:209K  renesas
2sk2725.pdf

2SK2725
2SK2725

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:83K  1
2sk2723.pdf

2SK2725
2SK2725

DATA SHEETMOS Field Effect Power Transistors2SK2723SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEPACKAGE DIMENSIONS(in millimeter)DESCRIPTION4.5 0.2This product is N-Channel MOS Field Effect Transistor 10.0 0.33.2 0.2designed for high current switching spplications.2.7 0.2FEATURES Low On-ResistanceRDS (on) 1 = 40m Max. (VGS = 10 V, ID = 13 A)R

 8.2. Size:83K  1
2sk2724.pdf

2SK2725
2SK2725

DATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SK2724SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION PACKAGE DIMENSIONS (in millimeter)This product is N-Channel MOS Field Effect Transistor4.5 0.2designed for high current switching applications.10.0 0.33.2 0.22.7 0.2FEATURES Low On-ResistanceRDS(on)1 = 27 m Max. (VGS = 10 V, ID = 18 A)RDS(on)

 8.3. Size:209K  renesas
2sk2726.pdf

2SK2725
2SK2725

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:209K  renesas
2sk2727.pdf

2SK2725
2SK2725

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:209K  renesas
2sk2729.pdf

2SK2725
2SK2725

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:52K  hitachi
2sk2728.pdf

2SK2725
2SK2725

2SK2728Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-454 B3rd. EditionFeatures Low on-resistance High speed switching Low drive current Avalanche ratingsOutlineTO3PDG1. Gate2. Drain12 (Flange) 33. SourceS2SK2728Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 500 VGate to sour

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