Справочник MOSFET. 2SK3479-Z

 

2SK3479-Z MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK3479-Z

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 125 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 83 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 210 nC

Время нарастания (tr): 18 ns

Выходная емкость (Cd): 1100 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.011 Ohm

Тип корпуса: TO263

Аналог (замена) для 2SK3479-Z

 

 

2SK3479-Z Datasheet (PDF)

2.1. 2sk3479-s-z-zj.pdf Size:205K _update

2SK3479-Z
2SK3479-Z

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.1. 2sk3474-01.pdf Size:100K _update

2SK3479-Z
2SK3479-Z

FUJI POWER MOSFET200303 2SK3474-01 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc=25°C ( unless otherwise specified) Item Symbol Ratings Unit Remarks Equivalent circuit schema

4.2. 2sk3472.pdf Size:191K _toshiba

2SK3479-Z
2SK3479-Z

2SK3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOS V) 2SK3472 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 4.0 m? (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 450 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolut

 4.3. 2sk3475.pdf Size:157K _toshiba

2SK3479-Z
2SK3479-Z

2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this

4.4. 2sk3471.pdf Size:154K _toshiba

2SK3479-Z
2SK3479-Z

2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3471 Switching Regulator and DC-DC Converter Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 10 ? (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 500 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID

 4.5. 2sk3473.pdf Size:230K _toshiba

2SK3479-Z
2SK3479-Z

2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3473 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.3? (typ.) • High forward transfer admittance: |Yfs| = 6.5S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 720 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Rat

4.6. 2sk3476.pdf Size:166K _toshiba

2SK3479-Z
2SK3479-Z

2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this

Другие MOSFET... GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
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Обновления

MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |
 

 

 

 

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