2SK3899-ZK Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK3899-ZK
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 146 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 84 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 1050 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0053 Ohm
Тип корпуса: TO263
- подбор MOSFET транзистора по параметрам
2SK3899-ZK Datasheet (PDF)
2sk3899-zk.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3899-zk.pdf

isc N-Channel MOSFET Transistor 2SK3899-ZKFEATURESDrain Current : I = 84A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 5.3m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3899.pdf

SMD Type MOSFETMOS Field Effect Transistor2SK3899TO-263Unit: mm+0.24.57-0.2+0.11.27-0.1FeaturesLow On-state resistanceRDS(on)1 =5.3mMAX. (VGS =10 V, ID =42A)+0.10.1max1.27-0.1RDS(on)2 =6.5 mMAX. (VGS =4.5 V, ID =42A)Low C iss: Ciss = 5500 pF TYP. +0.10.81-0.12.541Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.22Drain3 SourceAbsolute Maximum Rating
2sk3892.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs 2SK3892Silicon N-channel power MOSFETFor contactless relay, diving circuit for a solenoid,driving circuit for a motor, control equipment andswitching power supply Package Code Features TO-220D-A1 Pin Name Gate-source surrender voltage VGSS : 30 guaranteed 1: Gate Avalanc
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: ME3920-G | 4N60KL-TN3-R | 2SK3572-Z | VBMB1104N | FQD2N80TF | 5N60G-TF3-T | AONS66405
History: ME3920-G | 4N60KL-TN3-R | 2SK3572-Z | VBMB1104N | FQD2N80TF | 5N60G-TF3-T | AONS66405



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