2SK3900-ZP - описание и поиск аналогов

 ..1. Size:148K  nec
 2sk3900-zp.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3900 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3900 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3900-ZP TO-263 (MP-25ZP) FEATURES Super low on-state resistance (TO-263) RDS(on)1 = 8.0 m MAX. (VGS = 10 V, ID = 41 A) RDS(

 ..2. Size:357K  inchange semiconductor
 2sk3900-zp.pdf 

isc N-Channel MOSFET Transistor 2SK3900-ZP FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8.0m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 7.1. Size:151K  nec
 2sk3900.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3900 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3900 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3900-ZP TO-263 (MP-25ZP) FEATURES Super low on-state resistance (TO-263) RDS(on)1 = 8.0 m MAX. (VGS = 10 V, ID = 41 A) RDS(

 8.1. Size:238K  toshiba
 2sk3904.pdf 

2SK3904 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3904 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.2 (typ.) High forward transfer admittance Yfs = 9.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Abso

 8.2. Size:213K  toshiba
 2sk3907.pdf 

2SK3907 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3907 Switching Regulator Applications Unit mm Small gate charge Qg = 60 nC (typ.) Low drain-source ON resistance RDS (ON) = 0.18 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 500 A (VDS = 500 V) Enhancement model Vth =

 8.3. Size:179K  toshiba
 2sk3906.pdf 

2SK3906 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II -MOS VI) 2SK3906 Switching Regulator Applications Unit mm Small gate charge Qg = 60 nC (typ.) Fast reverse recovery time trr = 400 ns (typ.) Low drain-source ON-resistance RDS (ON) = 0.27 (typ.) High forward transfer admittance Yfs = 15S (typ.) Low leakage current IDSS

 8.4. Size:239K  toshiba
 2sk3903.pdf 

2SK3903 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3903 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.32 (typ.) High forward transfer admittance Yfs = 7.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Abs

 8.5. Size:239K  toshiba
 2sk3905.pdf 

2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3905 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.25 (typ.) High forward transfer admittance Yfs = 8.2 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Abs

 8.6. Size:276K  renesas
 2sk3902-zk.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:146K  nec
 2sk3901-zk.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3901 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3901 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3901-ZK TO-263 (MP-25ZK) FEATURES Super low On-state resistance (TO-263) RDS(on)1 = 13 m MAX. (VGS = 10 V, ID = 30 A) RDS(

 8.8. Size:287K  inchange semiconductor
 2sk3904.pdf 

isc N-Channel MOSFET Transistor 2SK3904 FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.9. Size:286K  inchange semiconductor
 2sk3907.pdf 

isc N-Channel MOSFET Transistor 2SK3907 FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.23 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.10. Size:286K  inchange semiconductor
 2sk3906.pdf 

isc N-Channel MOSFET Transistor 2SK3906 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.33 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.11. Size:286K  inchange semiconductor
 2sk3903.pdf 

isc N-Channel MOSFET Transistor 2SK3903 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.44 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.12. Size:287K  inchange semiconductor
 2sk3905.pdf 

isc N-Channel MOSFET Transistor 2SK3905 FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.31 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.13. Size:357K  inchange semiconductor
 2sk3901-zk.pdf 

isc N-Channel MOSFET Transistor 2SK3901-ZK FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.14. Size:357K  inchange semiconductor
 2sk3902-zk.pdf 

isc N-Channel MOSFET Transistor 2SK3902-ZK FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 21m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi