IRF9Z12
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRF9Z12
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 20
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 4
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 47
ns
Cossⓘ - Выходная емкость: 160
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.7
Ohm
Тип корпуса:
TO220AB
- подбор MOSFET транзистора по параметрам
IRF9Z12
Datasheet (PDF)
8.1. Size:361K international rectifier
irf9z14s.pdf 
PD - 9.911AIRF9Z14S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z14S)VDSS = -60V Low-profile through-hole (IRF9Z14L) 175C Operating TemperatureRDS(on) = 0.50 Fast SwitchingG P- ChannelID = -6.7A Fully Avalanche RatedSDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev
8.2. Size:1222K international rectifier
irf9z14spbf irf9z14lpbf.pdf 
PD-96014IRF9Z14SPbFIRF9Z14LPbF Lead-Free06/08/05Document Number: 91088 www.vishay.com1IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com2IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com3IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com4IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com5IRF9Z14S/LPbFDocument Number: 91088 www.vishay.com6IR
8.5. Size:251K international rectifier
irf9z14pbf.pdf 
PD - 95628IRF9Z14PbF Lead-Free8/3/04Document Number: 91088 www.vishay.com1IRF9Z14PbFDocument Number: 91088 www.vishay.com2IRF9Z14PbFDocument Number: 91088 www.vishay.com3IRF9Z14PbFDocument Number: 91088 www.vishay.com4IRF9Z14PbFDocument Number: 91088 www.vishay.com5IRF9Z14PbFDocument Number: 91088 www.vishay.com6IRF9Z14PbFPeak Diode Recovery
8.7. Size:385K international rectifier
irf9z10.pdf 
PD - 90459AIRF9Z10DSDGTO-220ABGDSGate Drain Source06/24/05Document Number: 90118 www.vishay.com1IRF9Z10Document Number: 90118 www.vishay.com2IRF9Z10Document Number: 90118 www.vishay.com3IRF9Z10Document Number: 90118 www.vishay.com4IRF9Z10Document Number: 90118 www.vishay.com5IRF9Z10Document Number: 90118 www.vishay.com6IRF9Z10Peak Di
8.8. Size:361K international rectifier
irf9z14s irf9z14l.pdf 
PD - 9.911AIRF9Z14S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z14S)VDSS = -60V Low-profile through-hole (IRF9Z14L) 175C Operating TemperatureRDS(on) = 0.50 Fast SwitchingG P- ChannelID = -6.7A Fully Avalanche RatedSDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev
8.9. Size:194K vishay
irf9z14spbf sihf9z14l sihf9z14s.pdf 
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S)Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating TemperatureQgs (nC) 3.8
8.10. Size:127K vishay
irf9z14 sihf9z14.pdf 
IRF9Z14, SiHF9Z14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 12 175 C Operating TemperatureQgs (nC) 3.8 Fast SwitchingQgd (nC) 5.1 Ease of ParallelingConfiguration Single Simple Drive Requir
8.11. Size:132K vishay
irf9z10pbf.pdf 
IRF9Z10, SiHF9Z10Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelQg (Max.) (nC) 12COMPLIANT 175 C Operating TemperatureQgs (nC) 3.8 Fast SwitchingQgd (nC) 5.1 Ease of ParallelingConfiguration Single Simple Drive Requi
8.12. Size:132K vishay
irf9z10 sihf9z10.pdf 
IRF9Z10, SiHF9Z10Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelQg (Max.) (nC) 12COMPLIANT 175 C Operating TemperatureQgs (nC) 3.8 Fast SwitchingQgd (nC) 5.1 Ease of ParallelingConfiguration Single Simple Drive Requi
8.13. Size:129K vishay
irf9z14pbf sihf9z14.pdf 
IRF9Z14, SiHF9Z14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 12 175 C Operating TemperatureQgs (nC) 3.8 Fast SwitchingQgd (nC) 5.1 Ease of ParallelingConfiguration Single Simple Drive Requir
8.14. Size:192K vishay
irf9z14l irf9z14lpbf.pdf 
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S)Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating TemperatureQgs (nC) 3.8
8.15. Size:169K vishay
irf9z14s sihf9z14s irf9z14l sihf9z14l.pdf 
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S)Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating TemperatureQgs (nC) 3.8
8.16. Size:1813K cn vbsemi
irf9z14pbf.pdf 
IRF9Z14PBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY VDS (V) RDS(on) () TrenchFET Power MOSFETID (A) Qg (Typ) 100 % UIS Tested0.062 at VGS = - 10 V - 20- 60 12.50.074 at VGS = - 4.5 V - 15 APPLICATIONS Load SwitchSTO-220ABGDG D STop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter
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History: IRF241
| NCE70T180D
