IRF9Z12 - описание и поиск аналогов

PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z14S) VDSS = -60V Low-profile through-hole (IRF9Z14L) 175 C Operating Temperature RDS(on) = 0.50 Fast Switching G P- Channel ID = -6.7A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev

PD-96014 IRF9Z14SPbF IRF9Z14LPbF Lead-Free 06/08/05 Document Number 91088 www.vishay.com 1 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 2 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 3 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 4 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 5 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 6 IR

PD - 95628 IRF9Z14PbF Lead-Free 8/3/04 Document Number 91088 www.vishay.com 1 IRF9Z14PbF Document Number 91088 www.vishay.com 2 IRF9Z14PbF Document Number 91088 www.vishay.com 3 IRF9Z14PbF Document Number 91088 www.vishay.com 4 IRF9Z14PbF Document Number 91088 www.vishay.com 5 IRF9Z14PbF Document Number 91088 www.vishay.com 6 IRF9Z14PbF Peak Diode Recovery

PD - 90459A IRF9Z10 D S D G TO-220AB GDS Gate Drain Source 06/24/05 Document Number 90118 www.vishay.com 1 IRF9Z10 Document Number 90118 www.vishay.com 2 IRF9Z10 Document Number 90118 www.vishay.com 3 IRF9Z10 Document Number 90118 www.vishay.com 4 IRF9Z10 Document Number 90118 www.vishay.com 5 IRF9Z10 Document Number 90118 www.vishay.com 6 IRF9Z10 Peak Di

PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z14S) VDSS = -60V Low-profile through-hole (IRF9Z14L) 175 C Operating Temperature RDS(on) = 0.50 Fast Switching G P- Channel ID = -6.7A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S) Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating Temperature Qgs (nC) 3.8

IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.50 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 12 175 C Operating Temperature Qgs (nC) 3.8 Fast Switching Qgd (nC) 5.1 Ease of Paralleling Configuration Single Simple Drive Requir

IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.50 RoHS* P-Channel Qg (Max.) (nC) 12 COMPLIANT 175 C Operating Temperature Qgs (nC) 3.8 Fast Switching Qgd (nC) 5.1 Ease of Paralleling Configuration Single Simple Drive Requi

IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.50 RoHS* P-Channel Qg (Max.) (nC) 12 COMPLIANT 175 C Operating Temperature Qgs (nC) 3.8 Fast Switching Qgd (nC) 5.1 Ease of Paralleling Configuration Single Simple Drive Requi

IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.50 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 12 175 C Operating Temperature Qgs (nC) 3.8 Fast Switching Qgd (nC) 5.1 Ease of Paralleling Configuration Single Simple Drive Requir

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S) Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating Temperature Qgs (nC) 3.8

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S) Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating Temperature Qgs (nC) 3.8

IRF9Z14PBF www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) ( ) TrenchFET Power MOSFET ID (A) Qg (Typ) 100 % UIS Tested 0.062 at VGS = - 10 V - 20 - 60 12.5 0.074 at VGS = - 4.5 V - 15 APPLICATIONS Load Switch S TO-220AB G D G D S Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter