IRF9Z12 datasheet, аналоги, основные параметры
Наименование производителя: IRF9Z12 📄📄
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 20 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 50 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 47 ns
Cossⓘ - Выходная емкость: 160 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.7 Ohm
Тип корпуса: TO220AB
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Аналог (замена) для IRF9Z12
- подборⓘ MOSFET транзистора по параметрам
IRF9Z12 даташит
8.1. Size:361K international rectifier
irf9z14s.pdf 
PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z14S) VDSS = -60V Low-profile through-hole (IRF9Z14L) 175 C Operating Temperature RDS(on) = 0.50 Fast Switching G P- Channel ID = -6.7A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev
8.2. Size:1222K international rectifier
irf9z14spbf irf9z14lpbf.pdf 
PD-96014 IRF9Z14SPbF IRF9Z14LPbF Lead-Free 06/08/05 Document Number 91088 www.vishay.com 1 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 2 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 3 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 4 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 5 IRF9Z14S/LPbF Document Number 91088 www.vishay.com 6 IR
8.5. Size:251K international rectifier
irf9z14pbf.pdf 
PD - 95628 IRF9Z14PbF Lead-Free 8/3/04 Document Number 91088 www.vishay.com 1 IRF9Z14PbF Document Number 91088 www.vishay.com 2 IRF9Z14PbF Document Number 91088 www.vishay.com 3 IRF9Z14PbF Document Number 91088 www.vishay.com 4 IRF9Z14PbF Document Number 91088 www.vishay.com 5 IRF9Z14PbF Document Number 91088 www.vishay.com 6 IRF9Z14PbF Peak Diode Recovery
8.7. Size:385K international rectifier
irf9z10.pdf 
PD - 90459A IRF9Z10 D S D G TO-220AB GDS Gate Drain Source 06/24/05 Document Number 90118 www.vishay.com 1 IRF9Z10 Document Number 90118 www.vishay.com 2 IRF9Z10 Document Number 90118 www.vishay.com 3 IRF9Z10 Document Number 90118 www.vishay.com 4 IRF9Z10 Document Number 90118 www.vishay.com 5 IRF9Z10 Document Number 90118 www.vishay.com 6 IRF9Z10 Peak Di
8.8. Size:361K international rectifier
irf9z14s irf9z14l.pdf 
PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z14S) VDSS = -60V Low-profile through-hole (IRF9Z14L) 175 C Operating Temperature RDS(on) = 0.50 Fast Switching G P- Channel ID = -6.7A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev
8.9. Size:194K vishay
irf9z14spbf sihf9z14l sihf9z14s.pdf 
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S) Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating Temperature Qgs (nC) 3.8
8.10. Size:127K vishay
irf9z14 sihf9z14.pdf 
IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.50 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 12 175 C Operating Temperature Qgs (nC) 3.8 Fast Switching Qgd (nC) 5.1 Ease of Paralleling Configuration Single Simple Drive Requir
8.11. Size:132K vishay
irf9z10pbf.pdf 
IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.50 RoHS* P-Channel Qg (Max.) (nC) 12 COMPLIANT 175 C Operating Temperature Qgs (nC) 3.8 Fast Switching Qgd (nC) 5.1 Ease of Paralleling Configuration Single Simple Drive Requi
8.12. Size:132K vishay
irf9z10 sihf9z10.pdf 
IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.50 RoHS* P-Channel Qg (Max.) (nC) 12 COMPLIANT 175 C Operating Temperature Qgs (nC) 3.8 Fast Switching Qgd (nC) 5.1 Ease of Paralleling Configuration Single Simple Drive Requi
8.13. Size:129K vishay
irf9z14pbf sihf9z14.pdf 
IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.50 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 12 175 C Operating Temperature Qgs (nC) 3.8 Fast Switching Qgd (nC) 5.1 Ease of Paralleling Configuration Single Simple Drive Requir
8.14. Size:192K vishay
irf9z14l irf9z14lpbf.pdf 
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S) Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating Temperature Qgs (nC) 3.8
8.15. Size:169K vishay
irf9z14s sihf9z14s irf9z14l sihf9z14l.pdf 
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S) Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating Temperature Qgs (nC) 3.8
8.16. Size:1813K cn vbsemi
irf9z14pbf.pdf 
IRF9Z14PBF www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) ( ) TrenchFET Power MOSFET ID (A) Qg (Typ) 100 % UIS Tested 0.062 at VGS = - 10 V - 20 - 60 12.5 0.074 at VGS = - 4.5 V - 15 APPLICATIONS Load Switch S TO-220AB G D G D S Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter
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