Справочник MOSFET. IRF9Z12

 

IRF9Z12 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF9Z12

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 20 W

Предельно допустимое напряжение сток-исток (Uds): 50 V

Максимально допустимый постоянный ток стока (Id): 4 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 0.7 Ohm

Тип корпуса: TO220

Аналог (замена) для IRF9Z12

 

IRF9Z12 Datasheet (PDF)

4.1. irf9z14pbf.pdf Size:129K _upd-mosfet

IRF9Z12
IRF9Z12

IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 60 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = - 10 V 0.50 RoHS* • P-Channel COMPLIANT Qg (Max.) (nC) 12 • 175 °C Operating Temperature Qgs (nC) 3.8 • Fast Switching Qgd (nC) 5.1 • Ease of Paralleling Configuration Single • Simple Drive Requir

4.2. irf9z10pbf.pdf Size:132K _upd-mosfet

IRF9Z12
IRF9Z12

IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 60 Available • Repetitive Avalanche Rated RDS(on) ()VGS = - 10 V 0.50 RoHS* • P-Channel Qg (Max.) (nC) 12 COMPLIANT • 175 °C Operating Temperature Qgs (nC) 3.8 • Fast Switching Qgd (nC) 5.1 • Ease of Paralleling Configuration Single • Simple Drive Requi

 4.3. irf9z14spbf.pdf Size:194K _upd-mosfet

IRF9Z12
IRF9Z12

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 • Advanced Process Technology RDS(on) ()VGS = - 10 V 0.50 • Surface Mount (IRF9Z14S, SiHF9Z14S) Qg (Max.) (nC) 12 • Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) • 175 °C Operating Temperature Qgs (nC) 3.8

4.4. irf9z14l irf9z14lpbf.pdf Size:192K _upd-mosfet

IRF9Z12
IRF9Z12

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 • Advanced Process Technology RDS(on) ()VGS = - 10 V 0.50 • Surface Mount (IRF9Z14S, SiHF9Z14S) Qg (Max.) (nC) 12 • Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) • 175 °C Operating Temperature Qgs (nC) 3.8

 4.5. irf9z14pbf.pdf Size:251K _international_rectifier

IRF9Z12
IRF9Z12

PD - 95628 IRF9Z14PbF Lead-Free 8/3/04 Document Number: 91088 www.vishay.com 1 IRF9Z14PbF Document Number: 91088 www.vishay.com 2 IRF9Z14PbF Document Number: 91088 www.vishay.com 3 IRF9Z14PbF Document Number: 91088 www.vishay.com 4 IRF9Z14PbF Document Number: 91088 www.vishay.com 5 IRF9Z14PbF Document Number: 91088 www.vishay.com 6 IRF9Z14PbF Peak Diode Recovery dv/dt

4.6. irf9z14spbf irf9z14lpbf.pdf Size:1222K _international_rectifier

IRF9Z12
IRF9Z12

PD-96014 IRF9Z14SPbF IRF9Z14LPbF Lead-Free 06/08/05 Document Number: 91088 www.vishay.com 1 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 2 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 3 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 4 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 5 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 6 IRF9Z14

4.7. irf9z14.pdf Size:173K _international_rectifier

IRF9Z12
IRF9Z12

4.8. irf9z15-35.pdf Size:97K _international_rectifier

IRF9Z12



4.9. irf9z14s.pdf Size:361K _international_rectifier

IRF9Z12
IRF9Z12

PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z14S) VDSS = -60V Low-profile through-hole (IRF9Z14L) 175C Operating Temperature RDS(on) = 0.50? Fast Switching G P- Channel ID = -6.7A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr

4.10. irf9z10.pdf Size:385K _international_rectifier

IRF9Z12
IRF9Z12

PD - 90459A IRF9Z10 D S D G TO-220AB GDS Gate Drain Source 06/24/05 Document Number: 90118 www.vishay.com 1 IRF9Z10 Document Number: 90118 www.vishay.com 2 IRF9Z10 Document Number: 90118 www.vishay.com 3 IRF9Z10 Document Number: 90118 www.vishay.com 4 IRF9Z10 Document Number: 90118 www.vishay.com 5 IRF9Z10 Document Number: 90118 www.vishay.com 6 IRF9Z10 Peak Diode

4.11. irf9z10 sihf9z10.pdf Size:132K _vishay

IRF9Z12
IRF9Z12

IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.50 RoHS* P-Channel Qg (Max.) (nC) 12 COMPLIANT 175 C Operating Temperature Qgs (nC) 3.8 Fast Switching Qgd (nC) 5.1 Ease of Paralleling Configuration Single Simple Drive Requirements S Compli

4.12. irf9z14 sihf9z14.pdf Size:127K _vishay

IRF9Z12
IRF9Z12

IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.50 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 12 175 C Operating Temperature Qgs (nC) 3.8 Fast Switching Qgd (nC) 5.1 Ease of Paralleling Configuration Single Simple Drive Requirements S Complia

4.13. irf9z14s sihf9z14s irf9z14l sihf9z14l.pdf Size:169K _vishay

IRF9Z12
IRF9Z12

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) (?)VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S) Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating Temperature Qgs (nC) 3.8 Fast Switchin

Другие MOSFET... IRF9640 , IRF9640S , IRF9641 , IRF9642 , IRF9643 , IRF9952 , IRF9953 , IRF9Z10 , IRF9540 , IRF9Z14 , IRF9Z14S , IRF9Z15 , IRF9Z20 , IRF9Z22 , IRF9Z24 , IRF9Z24N , IRF9Z24NL .

 

 
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