Справочник MOSFET. 2SK3518-01MR

 

2SK3518-01MR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK3518-01MR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 32 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 6.5 nC
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 60 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для 2SK3518-01MR

 

 

2SK3518-01MR Datasheet (PDF)

 ..1. Size:106K  fuji
2sk3518-01mr.pdf

2SK3518-01MR
2SK3518-01MR

FUJI POWER MOSFET2003032SK3518-01MRN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

 ..2. Size:279K  inchange semiconductor
2sk3518-01mr.pdf

2SK3518-01MR
2SK3518-01MR

isc N-Channel MOSFET Transistor 2SK3518-01MRFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.1. Size:213K  renesas
2sk3511-s-z-zj.pdf

2SK3518-01MR
2SK3518-01MR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:214K  renesas
2sk3510-s-z-zj.pdf

2SK3518-01MR
2SK3518-01MR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:104K  fuji
2sk3517-01.pdf

2SK3518-01MR
2SK3518-01MR

FUJI POWER MOSFET2003032SK3517-01N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unles

 8.4. Size:96K  fuji
2sk3515-01mr.pdf

2SK3518-01MR
2SK3518-01MR

FUJI POWER MOSFET2003032SK3515-01MRN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]TO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

 8.5. Size:100K  fuji
2sk3519-01.pdf

2SK3518-01MR
2SK3518-01MR

FUJI POWER MOSFET2003032SK3519-01N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unles

 8.6. Size:93K  fuji
2sk3514-01.pdf

2SK3518-01MR
2SK3518-01MR

FUJI POWER MOSFET2003032SK3514-01N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unles

 8.7. Size:259K  fuji
2sk3513-01l-s-sj.pdf

2SK3518-01MR
2SK3518-01MR

2SK3513-01L,S,SJ200303FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl

 8.8. Size:250K  fuji
2sk3516-01l-s-sj.pdf

2SK3518-01MR
2SK3518-01MR

2SK3516-01L,S,SJ200303FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

 8.9. Size:308K  fuji
2sk3512-01l-s-sj.pdf

2SK3518-01MR
2SK3518-01MR

http://www.fujielectric.com/products/semiconductor/2SK3512-01L,S,SJ FUJI POWER MOSFETSuper FAP-G Series N-CHANNEL SILICON POWER MOSFETOutline DrawingsFeaturesHigh speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proofApplicationsSwitching regulatorsP4UPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteris

 8.10. Size:221K  hitachi
2sk351.pdf

2SK3518-01MR
2SK3518-01MR

 8.11. Size:289K  inchange semiconductor
2sk3517-01.pdf

2SK3518-01MR
2SK3518-01MR

isc N-Channel MOSFET Transistor 2SK3517-01FEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.12. Size:357K  inchange semiconductor
2sk3510-zj.pdf

2SK3518-01MR
2SK3518-01MR

isc N-Channel MOSFET Transistor 2SK3510-ZJFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 8.13. Size:288K  inchange semiconductor
2sk3511.pdf

2SK3518-01MR
2SK3518-01MR

isc N-Channel MOSFET Transistor 2SK3511FEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 12.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.14. Size:299K  inchange semiconductor
2sk351.pdf

2SK3518-01MR
2SK3518-01MR

isc N-Channel MOSFET Transistor 2SK351FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

 8.15. Size:279K  inchange semiconductor
2sk3515-01mr.pdf

2SK3518-01MR
2SK3518-01MR

isc N-Channel MOSFET Transistor 2SK3515-01MRFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 8.16. Size:357K  inchange semiconductor
2sk3513s.pdf

2SK3518-01MR
2SK3518-01MR

isc N-Channel MOSFET Transistor 2SK3513SFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.17. Size:283K  inchange semiconductor
2sk3513l.pdf

2SK3518-01MR
2SK3518-01MR

isc N-Channel MOSFET Transistor 2SK3513LFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.18. Size:357K  inchange semiconductor
2sk3511-z.pdf

2SK3518-01MR
2SK3518-01MR

isc N-Channel MOSFET Transistor 2SK3511-ZFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 12.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 8.19. Size:282K  inchange semiconductor
2sk3510-s.pdf

2SK3518-01MR
2SK3518-01MR

isc N-Channel MOSFET Transistor 2SK3510-SFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 8.20. Size:288K  inchange semiconductor
2sk3510.pdf

2SK3518-01MR
2SK3518-01MR

isc N-Channel MOSFET Transistor 2SK3510FEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.21. Size:289K  inchange semiconductor
2sk3519-01.pdf

2SK3518-01MR
2SK3518-01MR

isc N-Channel MOSFET Transistor 2SK3519-01FEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.22. Size:356K  inchange semiconductor
2sk3510-z.pdf

2SK3518-01MR
2SK3518-01MR

isc N-Channel MOSFET Transistor 2SK3510-ZFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 8.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 8.23. Size:283K  inchange semiconductor
2sk3512l.pdf

2SK3518-01MR
2SK3518-01MR

isc N-Channel MOSFET Transistor 2SK3512LFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.24. Size:289K  inchange semiconductor
2sk3514-01.pdf

2SK3518-01MR
2SK3518-01MR

isc N-Channel MOSFET Transistor 2SK3514-01FEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.25. Size:357K  inchange semiconductor
2sk3512s.pdf

2SK3518-01MR
2SK3518-01MR

isc N-Channel MOSFET Transistor 2SK3512SFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.26. Size:357K  inchange semiconductor
2sk3511-zj.pdf

2SK3518-01MR
2SK3518-01MR

isc N-Channel MOSFET Transistor 2SK3511-ZJFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 12.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 8.27. Size:282K  inchange semiconductor
2sk3511-s.pdf

2SK3518-01MR
2SK3518-01MR

isc N-Channel MOSFET Transistor 2SK3511-SFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 12.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

Другие MOSFET... 2SK2880 , 2SK2885L , 2SK2885S , 2SK2770-01 , 2SK3516-01L , 2SK3516-01S , 2SK3516-01SJ , 2SK3517-01 , IRF9640 , 2SK3519-01 , 2SK3520-01MR , 2SK3521-01L , 2SK3521-01S , 2SK3521-01SJ , 2SK3522-01 , 2SK3524-01 , 2SK3526-01L .

 

 
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