2SK3520-01MR - описание и поиск аналогов

 ..1. Size:103K  fuji
 2sk3520-01mr.pdf 

FUJI POWER MOSFET200303 2SK3520-01MR N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle

 ..2. Size:279K  inchange semiconductor
 2sk3520-01mr.pdf 

isc N-Channel MOSFET Transistor 2SK3520-01MR FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.1. Size:112K  fuji
 2sk3529-01.pdf 

2SK3529-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle

 8.2. Size:106K  fuji
 2sk3528.pdf 

2SK3528-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwise s

 8.3. Size:252K  fuji
 2sk3526-01l-01s-01sj.pdf 

2SK3526-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl

 8.4. Size:109K  fuji
 2sk3522-01.pdf 

2SK3522-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features 11.6 0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un

 8.5. Size:254K  fuji
 2sk3521-01l-01s-01sj.pdf 

2SK3521-01L,S,SJ 200303 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power P4 Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle

 8.6. Size:107K  fuji
 2sk3527-01.pdf 

2SK3527-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features 11.6 0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un

 8.7. Size:106K  fuji
 2sk3523.pdf 

2SK3523-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Series TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwise

 8.8. Size:98K  fuji
 2sk3525.pdf 

FUJI POWER MOSFET 2SK3525-01MR N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwis

 8.9. Size:105K  fuji
 2sk3528-01r.pdf 

2SK3528-01R 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles

 8.10. Size:96K  fuji
 2sk3524-01.pdf 

FUJI POWER MOSFET 2SK3524-01 200304 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl

 8.11. Size:290K  inchange semiconductor
 2sk3529-01.pdf 

isc N-Channel MOSFET Transistor 2SK3529-01 FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 1.9 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.12. Size:286K  inchange semiconductor
 2sk3522n.pdf 

isc N-Channel MOSFET Transistor 2SK3522N FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.13. Size:356K  inchange semiconductor
 2sk3526s.pdf 

isc N-Channel MOSFET Transistor 2SK3526S FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.14. Size:227K  inchange semiconductor
 2sk3527.pdf 

isc N-Channel MOSFET Transistor 2SK3527 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

 8.15. Size:284K  inchange semiconductor
 2sk3523-01r.pdf 

isc N-Channel MOSFET Transistor 2SK3523-01R FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.16. Size:357K  inchange semiconductor
 2sk3521s.pdf 

isc N-Channel MOSFET Transistor 2SK3521S FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.17. Size:282K  inchange semiconductor
 2sk3526l.pdf 

isc N-Channel MOSFET Transistor 2SK3526L FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.18. Size:331K  inchange semiconductor
 2sk3522w.pdf 

isc N-Channel MOSFET Transistor 2SK3522W FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.19. Size:279K  inchange semiconductor
 2sk3525-01mr.pdf 

isc N-Channel MOSFET Transistor 2SK3525-01MR FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V =600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.20. Size:283K  inchange semiconductor
 2sk3521l.pdf 

isc N-Channel MOSFET Transistor 2SK3521L FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.21. Size:287K  inchange semiconductor
 2sk3528-01r.pdf 

isc N-Channel MOSFET Transistor 2SK3528-01R FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.37 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.22. Size:288K  inchange semiconductor
 2sk3524-01.pdf 

isc N-Channel MOSFET Transistor 2SK3524-01 FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid