2SK3682-01 - описание и поиск аналогов

 ..1. Size:101K  fuji
 2sk3682-01.pdf 

2SK3682-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C

 ..2. Size:290K  inchange semiconductor
 2sk3682-01.pdf 

isc N-Channel MOSFET Transistor 2SK3682-01 FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.1. Size:627K  toshiba
 2sk368.pdf 

2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Unit mm Constant Current Applications High breakdown voltage VGDS = -100 V (min) High input impedance IGSS = -1.0 nA (max) (VGS = -80 V) Small package Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Gat

 8.2. Size:262K  fuji
 2sk3684-01l-01s-01sj.pdf 

2SK3684-01L,S,SJ 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C

 8.3. Size:116K  fuji
 2sk3681-01.pdf 

2SK3681-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance 11.6 0.2 No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C

 8.4. Size:103K  fuji
 2sk3683-01mr.pdf 

2SK3683-01MR 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C

 8.5. Size:105K  fuji
 2sk3685-01.pdf 

2SK3685-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance 11.6 0.2 No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C

 8.6. Size:232K  fuji
 2sk3688-01l-01s-01sj.pdf 

2SK3688-01L,S,SJ FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching Low on-resistance No secondary breadown Low driving power P4 Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle

 8.7. Size:193K  fuji
 2sk3686-01.pdf 

FUJI POWER MOSFET 2SK3686-01 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl

 8.8. Size:109K  fuji
 2sk3680-01.pdf 

2SK3680-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance 11.6 0.2 No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C

 8.9. Size:194K  fuji
 2sk3687-01mr.pdf 

FUJI POWER MOSFET 2SK3687-01MR 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl

 8.10. Size:108K  fuji
 2sk3689-01.pdf 

2SK3689-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance 11.6 0.2 No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C

 8.11. Size:357K  inchange semiconductor
 2sk3688-01s.pdf 

isc N-Channel MOSFET Transistor 2SK3688-01S FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.57 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.12. Size:270K  inchange semiconductor
 2sk3681-01.pdf 

isc N-Channel MOSFET Transistor 2SK3681-01 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Ga

 8.13. Size:280K  inchange semiconductor
 2sk3683-01mr.pdf 

isc N-Channel MOSFET Transistor 2SK3683-01MR FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 8.14. Size:346K  inchange semiconductor
 2sk3685-01.pdf 

isc N-Channel MOSFET Transistor 2SK3685-01 FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.15. Size:289K  inchange semiconductor
 2sk3686-01.pdf 

isc N-Channel MOSFET Transistor 2SK3686-01 FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.57 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.16. Size:272K  inchange semiconductor
 2sk3680.pdf 

isc N-Channel MOSFET Transistor 2SK3680 FEATURES Static Drain-Source On-Resistance R = 0.11 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 8.17. Size:199K  inchange semiconductor
 2sk3681.pdf 

isc N-Channel MOSFET Transistor 2SK3681 FEATURES Static Drain-Source On-Resistance R = 160m (Max) DS(on) With low gate drive requirements 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

 8.18. Size:284K  inchange semiconductor
 2sk3684-01l.pdf 

isc N-Channel MOSFET Transistor 2SK3684-01L FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.19. Size:280K  inchange semiconductor
 2sk3687-01mr.pdf 

isc N-Channel MOSFET Transistor 2SK3687-01MR FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.57 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 8.20. Size:357K  inchange semiconductor
 2sk3688-01sj.pdf 

isc N-Channel MOSFET Transistor 2SK3688-01SJ FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.57 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 8.21. Size:346K  inchange semiconductor
 2sk3689-01.pdf 

isc N-Channel MOSFET Transistor 2SK3689-01 FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.57 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.22. Size:358K  inchange semiconductor
 2sk3684-01s.pdf 

isc N-Channel MOSFET Transistor 2SK3684-01S FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.23. Size:283K  inchange semiconductor
 2sk3688-01l.pdf 

isc N-Channel MOSFET Transistor 2SK3688-01L FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.57 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.24. Size:358K  inchange semiconductor
 2sk3684-01sj.pdf 

isc N-Channel MOSFET Transistor 2SK3684-01SJ FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s