2SK854 - параметры транзистора MOSFET, его аналоги, datasheet

2SK854 Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: 2SK854
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 450 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 175 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: TO220AB

Аналог (замена) для 2SK854

- подбор ⓘ MOSFET транзистора по параметрам

2SK854 Datasheet (PDF)

..1. Size:131K nec
2sk854.pdf pdf_icon

9.1. Size:62K toshiba
2sk856.pdf pdf_icon

9.2. Size:57K toshiba
2sk850.pdf pdf_icon

9.3. Size:121K nec
2sk855.pdf pdf_icon

9.4. Size:201K inchange semiconductor
2sk857.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK857DESCRIPTIONDrain Current I =45A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

9.5. Size:60K inchange semiconductor
2sk851.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK851 DESCRIPTION Drain Current ID=30A@ TC=25 Drain Source Voltage- : VDSS=200V(Min) APPLICATIONS Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 200 V

9.6. Size:198K inchange semiconductor
2sk856.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK856DESCRIPTIONDrain Current I =45A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

9.7. Size:62K inchange semiconductor
2sk859.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK859 DESCRIPTION Drain Current ID=9A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VA

9.8. Size:59K inchange semiconductor
2sk858.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK858 DESCRIPTION Drain Current ID=2A@ TC=25 Drain Source Voltage- : VDSS=600V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VA

9.9. Size:218K inchange semiconductor
2sk850.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK850DESCRIPTIONDrain Current I =40A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV D

Другие MOSFET... 2SK3689-01 , 2SK3690-01 , 2SK3691-01MR , 2SK819 , 2SK831 , 2SK833 , 2SK849 , 2SK851 , SPP20N60C3 , 2SK855 , 2SK856 , 2SK858 , 2SK859 , 2SK867 , 2SK867A , 2SK868 , 2SK868A .