2SK3987-01S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK3987-01S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.6 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 50 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.3 Ohm
Тип корпуса: TO263
Аналог (замена) для 2SK3987-01S
2SK3987-01S Datasheet (PDF)
2sk3987-01s.pdf
isc N-Channel MOSFET Transistor 2SK3987-01SFEATURESDrain Current : I = 3.6A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
2sk3987-01l-01s-01sj.pdf
2SK3987-01L,S,SJFUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)See to P4Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C
2sk3987-01l.pdf
isc N-Channel MOSFET Transistor 2SK3987-01LFEATURESDrain Current : I = 3.6A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
2sk3984-zk.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3986-01mr.pdf
2SK3986-01MRFUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220FHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unles
2sk3981-01.pdf
2SK3981-01FUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]TO-220ABFeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proof High voltageApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc
2sk3989-01mr.pdf
2SK3989-01MRFUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesFeaturesTO-220FHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)
2sk3983-01l-s-sj.pdf
2SK3983-01L,S,SJFUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)See to P4Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C
2sk3985-01.pdf
2SK3985-01FUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]TO-220ABFeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless
2sk3982-01mr.pdf
2SK3982-01MRFUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesHigh speed switching Low on-resistanceTO-220FNo secondary breadown Low driving powerAvalanche-proof High voltageApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(T
2sk3988-01.pdf
2SK3988-01FUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]TO-220ABFeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless
2sk3983-01s.pdf
isc N-Channel MOSFET Transistor 2SK3983-01SFEATURESDrain Current : I = 2.6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk3986-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3986-01MRFEATURESDrain Current : I = 3.6A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
2sk398.pdf
isc N-Channel MOSFET Transistor 2SK398FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 250m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3981-01.pdf
isc N-Channel MOSFET Transistor 2SK3981-01FEATURESDrain Current : I = 2.6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk3989-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3989-01MRFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
2sk3983-01l.pdf
isc N-Channel MOSFET Transistor 2SK3983-01LFEATURESDrain Current : I = 2.6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk3985-01.pdf
isc N-Channel MOSFET Transistor 2SK3985-01FEATURESDrain Current : I = 3.6A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk3983-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3983-01SJFEATURESDrain Current : I = 2.6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk3982-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3982-01MRFEATURESDrain Current : I = 2.6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk3988-01.pdf
isc N-Channel MOSFET Transistor 2SK3988-01FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918