2SK3511-ZJ datasheet, аналоги, основные параметры

Наименование производителя: 2SK3511-ZJ

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 100 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 75 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 83 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 21 ns

Cossⓘ - Выходная емкость: 810 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0125 Ohm

Тип корпуса: TO263

Аналог (замена) для 2SK3511-ZJ

- подборⓘ MOSFET транзистора по параметрам

 

2SK3511-ZJ даташит

 ..1. Size:357K  inchange semiconductor
 2sk3511-zj.pdf pdf_icon

2SK3511-ZJ

isc N-Channel MOSFET Transistor 2SK3511-ZJ FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 12.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 5.1. Size:357K  inchange semiconductor
 2sk3511-z.pdf pdf_icon

2SK3511-ZJ

isc N-Channel MOSFET Transistor 2SK3511-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 12.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 6.1. Size:213K  renesas
 2sk3511-s-z-zj.pdf pdf_icon

2SK3511-ZJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.2. Size:282K  inchange semiconductor
 2sk3511-s.pdf pdf_icon

2SK3511-ZJ

isc N-Channel MOSFET Transistor 2SK3511-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 12.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... 2SK3993-ZK, 2SK3510, 2SK3510-S, 2SK3510-Z, 2SK3510-ZJ, 2SK3511, 2SK3511-S, 2SK3511-Z, IRF520, 2SK3512-01L, 2SK3512-01S, 2SK3512-01SJ, 2SK3513-01L, 2SK3513-01S, 2SK3513-01SJ, 2SK3556-01L, 2SK3556-01S