2SK3556-01L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK3556-01L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 270 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 37 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 220 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: TO262
Аналог (замена) для 2SK3556-01L
2SK3556-01L Datasheet (PDF)
2sk3556-01l.pdf
isc N-Channel MOSFET Transistor 2SK3556-01LFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk3556-01l-s-sj.pdf
2SK3556-01L,S,SJ200304FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
2sk3556-01s.pdf
isc N-Channel MOSFET Transistor 2SK3556-01SFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk3557.pdf
Ordering number : ENN71692SK3557N-Channel Junction Silicon FET2SK3557Low-Noise HF Amplifier ApplicationsPreliminaryApplications Package Dimensions AM tuner RF amplifier. unit : mm Low noise amplifier. 2050A[2SK3557]Features Large yfs.0.40.163 Small Ciss. Ultrasmall-sized package permitting 2SK3557-0 to 0.1applied sets to be made smaller a
2sk3557-6-tb-e.pdf
2SK3557Ordering number : EN7169ASANYO SemiconductorsDATA SHEETN-Channel Junctin Silicon FETHigh-Frequency Low-Noise2SK3557Amplifier ApplicationsApplications AM tuner RF amplification Low noise amplifierFeatures Large yfs | | Small Ciss Ultrasmall-sized package permitting 2SK3557-applied sets to be made smaller and slimer Ultralow noise figureS
2sk3557.pdf
Ordering number : EN7169A2SK3557N-Channel JFEThttp://onsemi.com15V, 10 to 32mA, 35mS, CPApplications AM tuner RF amplification Low noise amplifierFeatures Large yfs | | Small Ciss Ultrasmall-sized package permitting 2SK3557-applied sets to be made smaller and slimer Ultralow noise figureSpecificationsAbsolute Maximum Ratings at Ta=25CParamete
2sk3554-01.pdf
2SK3554-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesTO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
2sk3550-01r.pdf
2SK3550-01R200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless other
2sk3555-01mr.pdf
2SK3555-01MR200304FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesTO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
2sk3554-01.pdf
isc N-Channel MOSFET Transistor 2SK3554-01FEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk3550-01r.pdf
isc N-Channel MOSFET Transistor 2SK3550-01RFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk3555-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3555-01MRFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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