2SK2892-01R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK2892-01R
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 100 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 70 ns
Cossⓘ - Выходная емкость: 2000 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
Тип корпуса: TO3PF
Аналог (замена) для 2SK2892-01R
2SK2892-01R Datasheet (PDF)
2sk2892-01r.pdf
2SK2892-01RFUJI POWER MOSFET[200509]N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsHigh speed switching TO-3PFLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25
2sk2892-01r.pdf
isc N-Channel MOSFET Transistor 2SK2892-01RFEATURESDrain Current : I = 90A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
2sk2890-01.pdf
N-channel MOS-FET2SK2890-01FAP-IIIB Series 30V 0,0105 50A 50W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Avalanche Rated> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics- Absolute Maximum Ratings (TC=25C), unless otherwise specified
2sk2897-01.pdf
N-channel MOS-FET2SK2897-01FAP-IIIB Series 60V 0,02 45A 40W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Avalanche Rated> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics- Absolute Maximum Ratings (TC=25C), unless otherwise specified
2sk2897-01mr.pdf
2SK2897-01MRFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsTO-220FHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=2
2sk2895-01.pdf
FUJI POWER MOSFET2SK2895-01200511N-CHANNEL SILICON POWER MOSFETFAP-IIIB SeriesOutline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersEquivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratingsDra
2sk2898-01.pdf
2SK2898-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsHigh speed switchingTO-3PLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C
2sk2896-01l-01s.pdf
2SK2896-01L,SFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESOutline DrawingsFeaturesHigh speed switching T-pack(L) T-pack(S)Low on-resistanceNo secondary breakdownLow driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsEquivalent circuit schematicAb
2sk2891-01.pdf
2SK2891-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsHigh speed switchingTO-3PLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C
2sk2899-01r.pdf
2SK2899-01RFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsHigh speed switching TO-3PFLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25
2sk2894-01r.pdf
2SK2894-01RFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsHigh speed switching TO-3PFLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25
2sk2890-01mr.pdf
2SK2890-01MRFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsTO-220FHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=2
2sk2893-01.pdf
2SK2893-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsHigh speed switchingTO-3PLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C
2sk2896-01s.pdf
isc N-Channel MOSFET Transistor 2SK2896-01SFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
2sk2890-01.pdf
isc N-Channel MOSFET Transistor 2SK2890-01FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 6.8m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk2895-01.pdf
isc N-Channel MOSFET Transistor 2SK2895-01FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A
2sk2898-01.pdf
isc N-Channel MOSFET Transistor 2SK2898-01FEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
2sk2891-01.pdf
isc N-Channel MOSFET Transistor 2SK2891-01FEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
2sk2899-01r.pdf
isc N-Channel MOSFET Transistor 2SK2899-01RFEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
2sk2896-01l.pdf
isc N-Channel MOSFET Transistor 2SK2896-01LFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
2sk2894-01r.pdf
isc N-Channel MOSFET Transistor 2SK2894-01RFEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 4.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
2sk2893-01.pdf
isc N-Channel MOSFET Transistor 2SK2893-01FEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 4.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
2sk2897-01.pdf
isc N-Channel MOSFET Transistor 2SK2897-01FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918