IRF9Z34NS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF9Z34NS
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 68 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 19 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 35(max) nC
trⓘ - Время нарастания: 55 ns
Cossⓘ - Выходная емкость: 280 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: TO263
IRF9Z34NS Datasheet (PDF)
irf9z34ns.pdf
PD - 9.1525IRF9Z34NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z34NS)VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175C Operating TemperatureRDS(on) = 0.10 Fast SwitchingG P-ChannelID = -19A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie
irf9z34nlpbf irf9z34nspbf.pdf
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irf9z34nspbf irf9z34nlpbf.pdf
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
irf9z34ns.pdf
IRF9Z34NSwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Load
irf9z34n.pdf
PD - 9.1485BIRF9Z34NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.10 P-ChannelG Fully Avalanche RatedID = -19ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are
auirf9z34n.pdf
PD - 97627AAUTOMOTIVE GRADEAUIRF9Z34NFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl P-Channel MOSFETDV(BR)DSS-55Vl Dynamic dV/dT Ratingl 175C Operating TemperatureRDS(on) max.0.10l Fast Switching Gl Fully Avalanche RatedIDS -19Al Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDescriptionS
irf9z34npbf.pdf
IRF9Z34NPbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl P-Channel l Fully Avalanche Rated Gl Lead-Free Description S
irf9z34npbf.pdf
IRF9Z34NPbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl P-Channel l Fully Avalanche Rated Gl Lead-Free Description S
irf9z34n.pdf
isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34NFEATURESStatic drain-source on-resistance:RDS(on)0.1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andrelia
Другие MOSFET... IRF9Z24NS , IRF9Z24S , IRF9Z25 , IRF9Z30 , IRF9Z32 , IRF9Z34 , IRF9Z34N , IRF9Z34NL , IRF2807 , IRF9Z34S , IRF9Z35 , IRFB11N50A , IRFB9N30A , IRFB9N60A , IRFB9N65A , IRFBA1404 , IRFBA22N50A .
Список транзисторов
Обновления
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