2SK3933-01S datasheet, аналоги, основные параметры

Наименование производителя: 2SK3933-01S

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 165 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6 ns

Cossⓘ - Выходная емкость: 130 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.7 Ohm

Тип корпуса: TO263

Аналог (замена) для 2SK3933-01S

- подборⓘ MOSFET транзистора по параметрам

 

2SK3933-01S даташит

 ..1. Size:356K  inchange semiconductor
 2sk3933-01s.pdf pdf_icon

2SK3933-01S

isc N-Channel MOSFET Transistor 2SK3933-01S FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 700m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 0.1. Size:356K  inchange semiconductor
 2sk3933-01sj.pdf pdf_icon

2SK3933-01S

isc N-Channel MOSFET Transistor 2SK3933-01SJ FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 700m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 4.1. Size:162K  fuji
 2sk3933-01l-s-sj.pdf pdf_icon

2SK3933-01S

2SK3933-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings E

 4.2. Size:282K  inchange semiconductor
 2sk3933-01l.pdf pdf_icon

2SK3933-01S

isc N-Channel MOSFET Transistor 2SK3933-01L FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 700m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

ПОКАЗАТЬ ЕЩЁ

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