2SK3550-01R - Даташиты. Аналоги. Основные параметры

2SK3550-01R 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless other

isc N-Channel MOSFET Transistor 2SK3550-01R FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.4 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

Ordering number ENN7169 2SK3557 N-Channel Junction Silicon FET 2SK3557 Low-Noise HF Amplifier Applications Preliminary Applications Package Dimensions AM tuner RF amplifier. unit mm Low noise amplifier. 2050A [2SK3557] Features Large yfs . 0.4 0.16 3 Small Ciss. Ultrasmall-sized package permitting 2SK3557- 0 to 0.1 applied sets to be made smaller a

2SK3557 Ordering number EN7169A SANYO Semiconductors DATA SHEET N-Channel Junctin Silicon FET High-Frequency Low-Noise 2SK3557 Amplifier Applications Applications AM tuner RF amplification Low noise amplifier Features Large yfs Small Ciss Ultrasmall-sized package permitting 2SK3557-applied sets to be made smaller and slimer Ultralow noise figure S

Ordering number EN7169A 2SK3557 N-Channel JFET http //onsemi.com 15V, 10 to 32mA, 35mS, CP Applications AM tuner RF amplification Low noise amplifier Features Large yfs Small Ciss Ultrasmall-sized package permitting 2SK3557-applied sets to be made smaller and slimer Ultralow noise figure Specifications Absolute Maximum Ratings at Ta=25 C Paramete

2SK3554-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl

2SK3556-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle

2SK3555-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl

isc N-Channel MOSFET Transistor 2SK3554-01 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.1 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

isc N-Channel MOSFET Transistor 2SK3556-01S FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.1 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

isc N-Channel MOSFET Transistor 2SK3556-01L FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.1 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

isc N-Channel MOSFET Transistor 2SK3555-01MR FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.1 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so