2SK3887-01 - описание и поиск аналогов

2SK3887-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C

isc N-Channel MOSFET Transistor 2SK3887-01 FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

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2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSIV) 2SK3880 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 5.2 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 640 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute

SPECIFICATION Power MOSFET Device Name 2SK3886-01MR Type Name MS5F5814 Spec. No. Jun-28-2004 Date NAME DATE APPROVED DRAWN Jun-28-'04 CHECKED Jun-28-'04 1 / 18 MS5F5814 CHECKED Jun-28-'04 H04-004-05 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in

SPECIFICATION Device Name Power MOSFET Type Name 2SK3882-01 Spec. No. MS5F5909 Date Sep.-16-2004 NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Sep.-16-'04 CHECKED Sep.-16-'04 MS5F5909 1 / 18 Sep.-16-'04 CHECKED H04-004-05 Downloaded from Elcodis.com electronic components distributor This m aterial and the inform ation herein is the p roperty of Fuji

2SK3888-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25

SPECIFICATION Device Name Power MOSFET Type Name 2SK3883-01 Spec. No. MS5F5910 Date Sep.-16-2004 NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Sep.-16-'04 CHECKED Sep.-16-'04 MS5F5910 1 / 18 CHECKED Sep.-16-'04 H04-004-05 Downloaded from Elcodis.com electronic components distributor This m aterial and the inform ation herein is the p roperty of Fuj

2SK3889-01L,S,SJ N-CHANNEL SILICON POWER MOSFET 200406 Outline Drawings (mm) FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings

SPECIFICATION Device Name Power MOSFET Type Name 2SK3885-01 Spec. No. MS5F5912 Date Sep.-16-2004 NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Sep.-16-'04 CHECKED Sep.-16-'04 MS5F5912 1 / 18 Sep.-16-'04 CHECKED H04-004-05 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither rep

SPECIFICATION Device Name Power MOSFET Type Name 2SK3884-01 Spec. No. MS5F5911 Date Sep.-16-2004 NAME DATE APPROVED Fuji Electric Device Technology Co.,Ltd. DRAWN Sep.-16-'04 CHECKED Sep.-16-'04 MS5F5911 1 / 18 Sep.-16-'04 CHECKED H04-004-05 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology Co.,Ltd. They s hall be neither rep

isc N-Channel MOSFET Transistor 2SK3886-01MR FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor 2SK3882-01 FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 16m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor 2SK3889S FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A

isc N-Channel MOSFET Transistor 2SK3880 FEATURES Drain Current I = 6.5A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 1.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB

isc N-Channel MOSFET Transistor 2SK3889L FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A