2SK3913-01MR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK3913-01MR
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 37 W
Предельно допустимое напряжение сток-исток |Uds|: 250 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 14 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 7 nC
Время нарастания (tr): 3 ns
Выходная емкость (Cd): 90 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.28 Ohm
Тип корпуса: TO220F
Аналог (замена) для 2SK3913-01MR
2SK3913-01MR Datasheet (PDF)
2sk3913-01mr.pdf
2SK3913-01MRFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesFeaturesOutline Drawings [mm]High speed switching Low on-resistanceTO-220FNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unles
2sk3913-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3913-01MRFEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.28(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk3919 2sk3919-zk.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3919SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3919 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching 2SK3919 TO-251 (MP-3) characteristics, and designed for low voltage high current 2SK3919-ZK TO-252 (MP-3ZK) applications such as DC/DC co
2sk3911.pdf
2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22 (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 500 A (VDS = 600 V) Enhancement model: Vth = 2
2sk3918.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3918SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3918 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching 2SK3918 TO-251 (MP-3) characteristics, and designed for low voltage high current 2SK3918-ZK TO-252 (MP-3ZK) applications such as DC/DC co
2sk3915-01mr.pdf
2SK3915-01MRFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220FHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unles
2sk3917-01mr.pdf
2SK3917-01MRFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220FHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unles
2sk3916-01.pdf
2SK3916-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220ABHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless
2sk3914-01.pdf
2SK3914-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220ABHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless
2sk3919.pdf
SMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICProduct specification2SK3919TO-252Unit: mm+0.16.50+0.15 2.30-0.1-0.15+0.85.30+0.2 0.50-0.7-0.2FeaturesLow on-state resistanceRDS(on)1 =5.6 m MAX. (VGS =10 V, ID =32 A)0.127Low Ciss: Ciss = 2050 pF TYP. 0.80+0.1 max-0.15 V drive available2.3 0.60+0.1 1Gate-0.1+0.154.60-0.152Drain3Source
2sk3918.pdf
isc N-Channel MOSFET Transistor 2SK3918FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 25V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3918-zk.pdf
isc N-Channel MOSFET Transistor 2SK3918-ZKFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 25V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3915-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3915-01MRFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk3911.pdf
isc N-Channel MOSFET Transistor 2SK3911FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.32(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3917-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3917-01MRFEATURESDrain Current : I = 4.3A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk3916-01.pdf
isc N-Channel MOSFET Transistor 2SK3916-01FEATURESDrain Current : I = 4.3A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk3919.pdf
isc N-Channel MOSFET Transistor 2SK3919FEATURESDrain Current : I = 64A@ T =25D CDrain Source Voltage: V = 25V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3919-zk.pdf
isc N-Channel MOSFET Transistor 2SK3919-ZKFEATURESDrain Current : I = 64A@ T =25D CDrain Source Voltage: V = 25V(Min)DSSStatic Drain-Source On-Resistance: R = 5.6m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3914-01.pdf
isc N-Channel MOSFET Transistor 2SK3914-01FEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
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